component
PJM20H05NTE
Public Made by Adomby adom
PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPJM20H05NTE
PJSEMI · MOSFETs · TO-252
PJM20H05NTE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement MOSFET; gate-source voltage is rated ±30 V, and gate threshold VGS(th) is 0.4 V min, 0.7 V typ, 1.5 V max at VDS=VGS, ID=250μA. |
| 2 | Drain | passive | Drain of the MOSFET; drain-source voltage is rated 200 V, continuous drain current 5 A, and pulsed drain current 20 A. |
| 3 | Source | passive | Source of the MOSFET; the source-drain diode forward current IS is rated 5 A maximum, with diode forward voltage VSD of 1.5 V max at VGS=0V, IS=5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | Ratings at 25℃ case temperature unless otherwise specified | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | Ratings at 25℃ case temperature unless otherwise specified | 1 | |
| Drain Current-Continuous | ID | 5 | A | Ratings at 25℃ case temperature unless otherwise specified | 1 | ||
| Drain Current-Pulsed | IDM | 20 | A | Ratings at 25℃ case temperature unless otherwise specified | 1 | ||
| Single pulse avalanche energy | EAS | 30 | mJ | Ratings at 25℃ case temperature unless otherwise specified | 1 | ||
| Maximum Power Dissipation | PD | 40 | W | Ratings at 25℃ case temperature unless otherwise specified | 1 | ||
| Junction Temperature | TJ | 150 | °C | Ratings at 25℃ case temperature unless otherwise specified | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | Ratings at 25℃ case temperature unless otherwise specified | 1 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 200 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=200V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 2.5 | 3 | Ω | VGS=4.5V,ID=0.5A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 2.8 | 4 | Ω | VGS=2.5V,ID=0.5A | 2 | |
| Diode Forward Voltage | VSD | 1.5 | V | VGS=0V,IS=5A | 2 | ||
| Diode Forward Current | IS | 5 | A | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 1 | ||
| Maximum Junction-to-Case | RθJC | 3.13 | °C/W | Note 2 | 1 |
CAD (KiCad official)
- Symbol:
PJM20H05NTE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
pjm20h05nte-etched.step/pjm20h05nte-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm20h05nte.step/pjm20h05nte.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (6 pp, sha256
fdb49b2cbd2e32c1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).