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AIDK12S65C5
Public Made by Adomby adom
Infineon Technologies Schottky Barrier Diodes (SBD), TO-263-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAIDK12S65C5
Infineon Technologies · Schottky Barrier Diodes (SBD) · TO-263-2
AIDK12S65C5 from Infineon Technologies, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the 650V/12A SiC Schottky diode (VDC,max 650 V), also connected to the case/tab. |
| 2 | Anode | passive | Anode of the 650V/12A SiC Schottky diode, with continuous forward current IF of 12 A at TC = 124 °C. |
| 3 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-2 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC blocking voltage | VDC | 650 | V | Tj = 25°C, IR = 0.07 mA | 5 | ||
| Diode forward voltage | VF | 1.5 | 1.7 | V | Tj = 25°C, IF = 12 A | 5 | |
| Diode forward voltage | VF | 1.8 | 2.1 | V | Tj = 150°C, IF = 12 A | 5 | |
| Reverse current | IR | 2 | 70 | µA | VR = 650 V, Tj = 25 °C | 5 | |
| Reverse current | IR | 14 | µA | VR = 650 V, Tj = 150 °C | 5 | ||
| Thermal resistance, junction-case | RthJC | 1.9 | 2.4 | K/W | 4 | ||
| Thermal resistance, junction-ambient | RthJA | 62 | K/W | 4 | |||
| Repetitive peak reverse voltage | VRRM | 650 | V | 3 | |||
| Continuous forward current | IF | 12 | A | TC = 124 °C, D=1 | 3 | ||
| Surge non-repetitive forward current, sine halfwave | IF,SM | 50 | A | TC= 25°C, tp=10ms | 3 | ||
| Surge non-repetitive forward current, sine halfwave | IF,SM | 40 | A | TC= 150°C, tp=10ms | 3 | ||
| Non-repetitive peak forward current | IF,max | 505 | A | TC= 25°C, tp=10μs | 3 | ||
| Power dissipation | Ptot | 62 | W | TC = 25°C | 3 | ||
| Diode dv/dt ruggedness | dv/dt | 100 | V/ns | VR=0...480V | 3 | ||
| ESD human body model | 8 | kV | Human body model, R= 1.5 kΩ, C = 100 pF | 3 | |||
| Operating temperature | Tj | -40 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Total capacitive charge | QC | 18 | nC | VR = 400 V, di/dt = 200 A/µs, IF ≤ IF,MAX, Tj = 150 °C | 5 | ||
| Total capacitance | C | 363 | pF | VR = 1 V, f = 1 MHz | 5 | ||
| Total capacitance | C | 47 | pF | VR = 300 V, f = 1 MHz | 5 | ||
| Total capacitance | C | 46 | pF | VR = 600 V, f = 1 MHz | 5 |
CAD (KiCad official)
- Symbol:
AIDK12S65C5 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2 (KiCad packages3D, STEP)
- 3D model files:
aidk12s65c5-etched.step/aidk12s65c5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aidk12s65c5.step/aidk12s65c5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
bfa3be6e8f2b4d57, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).