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AIDK12S65C5

Infineon Technologies · Schottky Barrier Diodes (SBD) · TO-263-2

AIDK12S65C5 from Infineon Technologies, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode of the 650V/12A SiC Schottky diode (VDC,max 650 V), also connected to the case/tab.
2 Anode passive Anode of the 650V/12A SiC Schottky diode, with continuous forward current IF of 12 A at TC = 124 °C.
3 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-2
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC blocking voltage VDC 650 V Tj = 25°C, IR = 0.07 mA 5
Diode forward voltage VF 1.5 1.7 V Tj = 25°C, IF = 12 A 5
Diode forward voltage VF 1.8 2.1 V Tj = 150°C, IF = 12 A 5
Reverse current IR 2 70 µA VR = 650 V, Tj = 25 °C 5
Reverse current IR 14 µA VR = 650 V, Tj = 150 °C 5
Thermal resistance, junction-case RthJC 1.9 2.4 K/W 4
Thermal resistance, junction-ambient RthJA 62 K/W 4
Repetitive peak reverse voltage VRRM 650 V 3
Continuous forward current IF 12 A TC = 124 °C, D=1 3
Surge non-repetitive forward current, sine halfwave IF,SM 50 A TC= 25°C, tp=10ms 3
Surge non-repetitive forward current, sine halfwave IF,SM 40 A TC= 150°C, tp=10ms 3
Non-repetitive peak forward current IF,max 505 A TC= 25°C, tp=10μs 3
Power dissipation Ptot 62 W TC = 25°C 3
Diode dv/dt ruggedness dv/dt 100 V/ns VR=0...480V 3
ESD human body model 8 kV Human body model, R= 1.5 kΩ, C = 100 pF 3
Operating temperature Tj -40 175 °C 3
Storage temperature Tstg -55 150 °C 3
Total capacitive charge QC 18 nC VR = 400 V, di/dt = 200 A/µs, IF ≤ IF,MAX, Tj = 150 °C 5
Total capacitance C 363 pF VR = 1 V, f = 1 MHz 5
Total capacitance C 47 pF VR = 300 V, f = 1 MHz 5
Total capacitance C 46 pF VR = 600 V, f = 1 MHz 5

CAD (KiCad official)

  • Symbol: AIDK12S65C5
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2 (KiCad packages3D, STEP)
  • 3D model files: aidk12s65c5-etched.step / aidk12s65c5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aidk12s65c5.step / aidk12s65c5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 bfa3be6e8f2b4d57, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF