component
HSPD30P06PG
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHSPD30P06PG
HXY MOSFET · MOSFETs · TO-252-2L
HSPD30P06PG from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V and the device operates with gate drive as low as 4.5 V. |
| 2 | D | passive | Drain, connected to the exposed tab (centre lead is omitted in the 2L package); drain-source voltage is rated -60 V and continuous current -15 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current is rated -18 A and pulsed source current -36 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 70 | 82 | mΩ | VGS=-10V, ID=-12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 85 | 105 | mΩ | VGS=-4.5V, ID=-8A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | 1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -18 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -36 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | -15 | A | TC=25℃, VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -11 | A | TC=100℃, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -36 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 35.4 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A | 1 | ||
| Avalanche Current | IAS | -26.6 | A | 1 | |||
| Total Power Dissipation | PD | 34.7 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△Tj | -0.03 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.56 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 15.4 | S | VDS=-5V, ID=-12A | 2 | ||
| Gate Resistance | Rg | 13.5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 9.86 | nC | VDS=-48V, VGS=-4.5V, ID=-10A | 2 | ||
| Gate-Source Charge | Qgs | 3.08 | nC | VDS=-48V, VGS=-4.5V, ID=-10A | 2 | ||
| Gate-Drain Charge | Qgd | 2.95 | nC | VDS=-48V, VGS=-4.5V, ID=-10A | 2 | ||
| Turn-On Delay Time | Td(on) | 28.8 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Rise Time | Tr | 19.8 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Turn-Off Delay Time | Td(off) | 60.8 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Fall Time | Tf | 7.2 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Input Capacitance | Ciss | 1447 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 97.3 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 70 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HSPD30P06PG - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hspd30p06pg-etched.step/hspd30p06pg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hspd30p06pg.step/hspd30p06pg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
01b4c9b61cfc488c, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).