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HSPD30P06PG

HXY MOSFET · MOSFETs · TO-252-2L

HSPD30P06PG from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V and the device operates with gate drive as low as 4.5 V.
2 D passive Drain, connected to the exposed tab (centre lead is omitted in the 2L package); drain-source voltage is rated -60 V and continuous current -15 A at TC=25℃.
3 S passive Source; continuous source current is rated -18 A and pulsed source current -36 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 70 82 mΩ VGS=-10V, ID=-12A 2
Static Drain-Source On-Resistance RDS(ON) 85 105 mΩ VGS=-4.5V, ID=-8A 2
Gate Threshold Voltage VGS(th) -1.2 1.5 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -18 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -36 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -60 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Continuous Drain Current ID -15 A TC=25℃, VGS @ -10V 1
Continuous Drain Current ID -11 A TC=100℃, VGS @ -10V 1
Pulsed Drain Current IDM -36 A 1
Single Pulse Avalanche Energy EAS 35.4 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A 1
Avalanche Current IAS -26.6 A 1
Total Power Dissipation PD 34.7 W TC=25℃ 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△Tj -0.03 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 4.56 mV/℃ 2
Forward Transconductance gfs 15.4 S VDS=-5V, ID=-12A 2
Gate Resistance Rg 13.5 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (-4.5V) Qg 9.86 nC VDS=-48V, VGS=-4.5V, ID=-10A 2
Gate-Source Charge Qgs 3.08 nC VDS=-48V, VGS=-4.5V, ID=-10A 2
Gate-Drain Charge Qgd 2.95 nC VDS=-48V, VGS=-4.5V, ID=-10A 2
Turn-On Delay Time Td(on) 28.8 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Rise Time Tr 19.8 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Turn-Off Delay Time Td(off) 60.8 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Fall Time Tf 7.2 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Input Capacitance Ciss 1447 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 97.3 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 70 pF VDS=-15V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: HSPD30P06PG
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hspd30p06pg-etched.step / hspd30p06pg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hspd30p06pg.step / hspd30p06pg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 01b4c9b61cfc488c, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF