component
BC847BPN_R1_00001
Public Made by Adomby adom
PANJIT International Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBC847BPN_R1_00001
PANJIT International · Bipolar (BJT) · SOT-363
BC847BPN_R1_00001 from PANJIT International, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN transistor; NPN limits are VCBO 50 V, VCEO 45 V, VEBO 6.0 V, IC 100 mA. |
| 2 | B1 | passive | Base of the NPN transistor; maximum emitter-base voltage 6.0 V. |
| 3 | C2 | passive | Collector of the PNP transistor; PNP limits are VCBO -50 V, VCEO -45 V, IC -100 mA. |
| 4 | E2 | passive | Emitter of the PNP transistor; maximum emitter-base voltage -5.0 V. |
| 5 | B2 | passive | Base of the PNP transistor; maximum emitter-base voltage -5.0 V. |
| 6 | C1 | passive | Collector of the NPN transistor; VCBO 50 V, VCEO 45 V, IC 100 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (NPN) | V(BR)CEO | 45 | V | I_C = 10mA | 2 | ||
| Collector-Emitter Breakdown Voltage (NPN) | V(BR)CES | 50 | V | I_C = 10uA, V_EB = 0 | 2 | ||
| Collector-Base Breakdown Voltage (NPN) | V(BR)CBO | 50 | V | I_C = 10uA | 2 | ||
| Emitter-Base Breakdown Voltage (NPN) | V(BR)EBO | 6 | V | I_E = 1.0uA | 2 | ||
| Collector Cutoff Current (NPN) | ICBO | 15 | nA | V_CB = 30V, I_E = 0 | 2 | ||
| Collector Cutoff Current (NPN) | ICBO | 5 | uA | T_J = 150°C | 2 | ||
| Emitter Cutoff Current (NPN) | IEBO | 100 | nA | V_EB = 5V, I_C = 0 | 2 | ||
| DC Current Gain (NPN) | hFE | 200 | 450 | - | V_CE = 5V, I_C = 2.0mA | 2 | |
| Collector-Emitter Saturation Voltage (NPN) | VCE(SAT) | 0.1 | V | I_C = 10mA, I_B = 0.5mA | 2 | ||
| Collector-Emitter Saturation Voltage (NPN) | VCE(SAT) | 0.4 | V | I_C = 100mA, I_B = 5mA | 2 | ||
| Base-Emitter Voltage (NPN) | VBE | 0.58 | 0.7 | V | V_CE = 5V, I_C = 2.0mA | 2 | |
| Gain-Bandwidth Product (NPN) | fT | 100 | MHz | V_CE = 5V, I_C = 10mA, f = 100MHz | 2 | ||
| Collector-Base Capacitance (NPN) | CCBO | 1.5 | pF | V_CB = 10V, f = 1.0MHz | 2 | ||
| Collector-Emitter Breakdown Voltage (PNP) | V(BR)CEO | -45 | V | I_C = -10mA | 2 | ||
| Collector-Emitter Breakdown Voltage (PNP) | V(BR)CES | -50 | V | I_C = -10uA, V_EB = 0 | 2 | ||
| Collector-Base Breakdown Voltage (PNP) | V(BR)CBO | -50 | V | I_C = -10uA | 2 | ||
| Emitter-Base Breakdown Voltage (PNP) | V(BR)EBO | -5 | V | I_E = -1.0uA | 2 | ||
| Collector Cutoff Current (PNP) | ICBO | -15 | nA | V_CB = -30V, I_E = 0 | 2 | ||
| Collector Cutoff Current (PNP) | ICBO | -4 | uA | T_J = 150°C | 2 | ||
| Emitter Cutoff Current (PNP) | IEBO | -100 | nA | V_EB = -5V, I_C = 0 | 2 | ||
| DC Current Gain (PNP) | hFE | 200 | 475 | - | V_CE = -5V, I_C = -2.0mA | 2 | |
| Collector-Emitter Saturation Voltage (PNP) | VCE(SAT) | -0.3 | V | I_C = -10mA, I_B = -0.5mA | 2 | ||
| Collector-Emitter Saturation Voltage (PNP) | VCE(SAT) | -0.65 | V | I_C = -100mA, I_B = -5mA | 2 | ||
| Base-Emitter Voltage (PNP) | VBE | -0.6 | -0.75 | V | 2 | ||
| Gain-Bandwidth Product (PNP) | fT | 100 | MHz | f = 100MHz | 2 | ||
| Collector-Base Capacitance (PNP) | CCBO | 4.5 | pF | V_CB = -10V, f = 1.0MHz | 2 | ||
| Collector-Emitter Voltage (NPN absolute maximum) | VCEO | 45 | V | T_J = 25°C unless otherwise noted | 1 | ||
| Collector-Base Voltage (NPN absolute maximum) | VCBO | 50 | V | T_J = 25°C unless otherwise noted | 1 | ||
| Emitter-Base Voltage (NPN absolute maximum) | VEBO | 6 | V | T_J = 25°C unless otherwise noted | 1 | ||
| Collector Current (NPN absolute maximum) | IC | 100 | mA | T_J = 25°C unless otherwise noted | 1 | ||
| Total Power Dissipation (NPN absolute maximum) | PD | 200 | mW | Note 1: FR-4 board 70 x 60 x 1mm with minimum recommended pad layout | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Collector-Emitter Voltage (PNP absolute maximum) | VCEO | -45 | V | T_J = 25°C unless otherwise noted | 1 | ||
| Collector-Base Voltage (PNP absolute maximum) | VCBO | -50 | V | T_J = 25°C unless otherwise noted | 1 | ||
| Emitter-Base Voltage (PNP absolute maximum) | VEBO | -5 | V | T_J = 25°C unless otherwise noted | 1 | ||
| Collector Current (PNP absolute maximum) | IC | -100 | mA | T_J = 25°C unless otherwise noted | 1 | ||
| Thermal Resistance, Junction to Ambient | thja | 556 | °C/W | Note 1: FR-4 board 70 x 60 x 1mm with minimum recommended pad layout | 1 |
CAD (KiCad official)
- Symbol:
BC847BPN_R1_00001 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bc847bpn-r1-00001-etched.step/bc847bpn-r1-00001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc847bpn-r1-00001.step/bc847bpn-r1-00001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (6 pp, sha256
38d2fbf1fc4868f9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).