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BC847BPN_R1_00001

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PANJIT International Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC847BPN_R1_00001

PANJIT International · Bipolar (BJT) · SOT-363

BC847BPN_R1_00001 from PANJIT International, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the NPN transistor; NPN limits are VCBO 50 V, VCEO 45 V, VEBO 6.0 V, IC 100 mA.
2 B1 passive Base of the NPN transistor; maximum emitter-base voltage 6.0 V.
3 C2 passive Collector of the PNP transistor; PNP limits are VCBO -50 V, VCEO -45 V, IC -100 mA.
4 E2 passive Emitter of the PNP transistor; maximum emitter-base voltage -5.0 V.
5 B2 passive Base of the PNP transistor; maximum emitter-base voltage -5.0 V.
6 C1 passive Collector of the NPN transistor; VCBO 50 V, VCEO 45 V, IC 100 mA maximum.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (NPN) V(BR)CEO 45 V I_C = 10mA 2
Collector-Emitter Breakdown Voltage (NPN) V(BR)CES 50 V I_C = 10uA, V_EB = 0 2
Collector-Base Breakdown Voltage (NPN) V(BR)CBO 50 V I_C = 10uA 2
Emitter-Base Breakdown Voltage (NPN) V(BR)EBO 6 V I_E = 1.0uA 2
Collector Cutoff Current (NPN) ICBO 15 nA V_CB = 30V, I_E = 0 2
Collector Cutoff Current (NPN) ICBO 5 uA T_J = 150°C 2
Emitter Cutoff Current (NPN) IEBO 100 nA V_EB = 5V, I_C = 0 2
DC Current Gain (NPN) hFE 200 450 - V_CE = 5V, I_C = 2.0mA 2
Collector-Emitter Saturation Voltage (NPN) VCE(SAT) 0.1 V I_C = 10mA, I_B = 0.5mA 2
Collector-Emitter Saturation Voltage (NPN) VCE(SAT) 0.4 V I_C = 100mA, I_B = 5mA 2
Base-Emitter Voltage (NPN) VBE 0.58 0.7 V V_CE = 5V, I_C = 2.0mA 2
Gain-Bandwidth Product (NPN) fT 100 MHz V_CE = 5V, I_C = 10mA, f = 100MHz 2
Collector-Base Capacitance (NPN) CCBO 1.5 pF V_CB = 10V, f = 1.0MHz 2
Collector-Emitter Breakdown Voltage (PNP) V(BR)CEO -45 V I_C = -10mA 2
Collector-Emitter Breakdown Voltage (PNP) V(BR)CES -50 V I_C = -10uA, V_EB = 0 2
Collector-Base Breakdown Voltage (PNP) V(BR)CBO -50 V I_C = -10uA 2
Emitter-Base Breakdown Voltage (PNP) V(BR)EBO -5 V I_E = -1.0uA 2
Collector Cutoff Current (PNP) ICBO -15 nA V_CB = -30V, I_E = 0 2
Collector Cutoff Current (PNP) ICBO -4 uA T_J = 150°C 2
Emitter Cutoff Current (PNP) IEBO -100 nA V_EB = -5V, I_C = 0 2
DC Current Gain (PNP) hFE 200 475 - V_CE = -5V, I_C = -2.0mA 2
Collector-Emitter Saturation Voltage (PNP) VCE(SAT) -0.3 V I_C = -10mA, I_B = -0.5mA 2
Collector-Emitter Saturation Voltage (PNP) VCE(SAT) -0.65 V I_C = -100mA, I_B = -5mA 2
Base-Emitter Voltage (PNP) VBE -0.6 -0.75 V 2
Gain-Bandwidth Product (PNP) fT 100 MHz f = 100MHz 2
Collector-Base Capacitance (PNP) CCBO 4.5 pF V_CB = -10V, f = 1.0MHz 2
Collector-Emitter Voltage (NPN absolute maximum) VCEO 45 V T_J = 25°C unless otherwise noted 1
Collector-Base Voltage (NPN absolute maximum) VCBO 50 V T_J = 25°C unless otherwise noted 1
Emitter-Base Voltage (NPN absolute maximum) VEBO 6 V T_J = 25°C unless otherwise noted 1
Collector Current (NPN absolute maximum) IC 100 mA T_J = 25°C unless otherwise noted 1
Total Power Dissipation (NPN absolute maximum) PD 200 mW Note 1: FR-4 board 70 x 60 x 1mm with minimum recommended pad layout 1
Operating Junction Temperature Range TJ -55 150 °C 1
Storage Temperature Range Tstg -55 150 °C 1
Collector-Emitter Voltage (PNP absolute maximum) VCEO -45 V T_J = 25°C unless otherwise noted 1
Collector-Base Voltage (PNP absolute maximum) VCBO -50 V T_J = 25°C unless otherwise noted 1
Emitter-Base Voltage (PNP absolute maximum) VEBO -5 V T_J = 25°C unless otherwise noted 1
Collector Current (PNP absolute maximum) IC -100 mA T_J = 25°C unless otherwise noted 1
Thermal Resistance, Junction to Ambient thja 556 °C/W Note 1: FR-4 board 70 x 60 x 1mm with minimum recommended pad layout 1

CAD (KiCad official)

  • Symbol: BC847BPN_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc847bpn-r1-00001-etched.step / bc847bpn-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847bpn-r1-00001.step / bc847bpn-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (6 pp, sha256 38d2fbf1fc4868f9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF