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INA190A5IDDFR

Texas Instruments · Current-Sensing Amplifiers · TSOT-23-8

INA190A5IDDFR from Texas Instruments, in a TSOT-23-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VS power_in Power supply, 1.7 V to 5.5 V.
2 ENABLE input Enable pin: driven to VS the device is on as a current sense amplifier; driven to GND the device is off, supply current is reduced and the output is high-impedance; must be driven externally or connected to VS if not used.
3 REF input Reference input that enables bidirectional current sensing with an externally applied voltage.
4 GND power_in Analog ground.
5 OUT output Analog voltage output that is the gained up voltage difference from IN+ to IN-, offset by the voltage applied to the REF pin.
6 NC unconnected Not internally connected; either float this pin or connect to any voltage between GND and VS.
7 IN+ input Current-sense amplifier positive input; for high-side applications connect to bus voltage side of sense resistor, for low-side applications connect to load side of sense resistor.
8 IN- input Current-sense amplifier negative input; for high-side applications connect to load side of sense resistor, for low-side applications connect to ground side of sense resistor.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TSOT-23-8
Category Operational Amplifier/Comparator
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VS 6 V 4
Differential analog input voltage VIN+ - VIN- -42 42 V (VIN+), (VIN-) 4
Analog input voltage wrt GND VIN+, VIN- -0.3 42 V GND, 0.3 to 42, with respect to GND 4
ENABLE voltage VENABLE -0.3 6 V GND, 0.3 to 6 4
REF, OUT voltage -0.3 V GND, 0.3 to (VS) + 0.3 4
Input current into any pin 5 mA 4
Operating temperature TA -55 150 °C 4
Junction temperature TJ 150 °C 4
Storage temperature Tstg -65 150 °C 4
ESD HBM V(ESD) -3000 3000 V Human-body model per ANSI/ESDA/JEDEC JS-001 4
ESD CDM V(ESD) -1000 1000 V Charged-device model per JESD22-C101 4
Common-mode input range VCM -0.2 40 V GND, 0.2 to 40 4
Input pin voltage range VIN+, VIN- -0.2 40 V GND, 0.2 to 40 4
Operating supply voltage VS 1.7 5.5 V 4
Reference pin voltage range VREF 0 V GND to VS 4
Operating free-air temperature TA -40 125 °C 4
Junction-to-ambient thermal resistance RθJA 170.7 °C/W DDF (SOT23) 8 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 132.7 °C/W DDF (SOT23) 8 pins 4
Junction-to-board thermal resistance RθJB 65.3 °C/W DDF (SOT23) 8 pins 4
Junction-to-top characterization parameter ΨJT 45.7 °C/W DDF (SOT23) 8 pins 4
Junction-to-board characterization parameter ΨJB 65.2 °C/W DDF (SOT23) 8 pins 4
Common-mode rejection ratio CMRR 132 150 dB VSENSE = 0 mV, VIN+ = -0.1 V to 40 V, TA = -40°C to +125°C 5
Offset voltage, RTI VOS -3 15 µV VS = 1.8 V, VSENSE = 0 mV; printed -3 and ±15 5
Offset drift, RTI dVOS/dT 10 80 nV/°C VSENSE = 0 mV, TA = -40°C to +125°C 5
Power-supply rejection ratio, RTI PSRR -1 5 µV/V VSENSE = 0 mV, VS = 1.7 V to 5.5 V; printed -1 and ±5 5
Input bias current IIB 0.5 3 nA VSENSE = 0 mV 5
Input offset current IIO 0.07 nA VSENSE = 0 mV; printed ±0.07 5
Gain (A5) G 500 V/V A5 devices 5
Gain error (A5) EG -0.08 0.4 % VOUT = 0.1 V to VS, 0.1 V, A5 devices; printed -0.08% and ±0.4% 5
Gain error drift 2 7 ppm/°C TA = -40°C to +125°C 5
Nonlinearity error 0.01 % VOUT = 0.1 V to VS, 0.1 V; printed ±0.01% 5
Reference voltage rejection ratio (A5) RVRR 0.25 3 µV/V VREF = 100 mV to VS, 100 mV, TA = -40°C to +125°C, A4, A5 devices; printed ±0.25 and ±3 5
Maximum capacitive load 1 nF No sustained oscillation 5
Swing to VS power-supply rail VSP -20 -40 mV VS = 1.8 V, RL = 10 kΩ to GND, TA = -40°C to +125°C; printed (VS), 20 typ, (VS), 40 max 5
Swing to GND VSN 0.05 1 mV VS = 1.8 V, RL = 10 kΩ to GND, TA = -40°C to +125°C, VSENSE = -10 mV, VREF = 0 V; printed (VGND)+0.05 typ, (VGND)+1 max 5
Zero current output voltage (A5) VZL 3 9 mV VS = 1.8 V, RL = 10 kΩ to GND, TA = -40°C to +125°C, VSENSE = 0 mV, VREF = 0 V, A5 devices; (VGND)+3 typ, (VGND)+9 max 5
Bandwidth (A5) BW 27 kHz A5 devices, CLOAD = 10 pF 5
Slew rate SR 0.3 V/µs VS = 5.0 V, VOUT = 0.5 V to 4.5 V 5
Settling time tS 30 µs From current step to within 1% of final value 5
Voltage noise density 75 nV/√Hz 6
ENABLE leakage input current IEN 1 100 nA 0 V ≤ VENABLE ≤ VS 6
ENABLE high-level input voltage VIH 6 V min 0.7 × VS 6
ENABLE low-level input voltage VIL 0 V max 0.3 × VS 6
ENABLE hysteresis VHYS 300 mV 6
Output leakage disabled IODIS 1 5 µA VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V 6
Quiescent current IQ 48 65 µA VS = 1.8 V, VSENSE = 0 mV 6
Quiescent current over temperature IQ 90 µA VS = 1.8 V, VSENSE = 0 mV, TA = -40°C to +125°C 6
Quiescent current disabled IQDIS 10 100 nA VENABLE = 0 V, VSENSE = 0 mV 6

CAD (KiCad official)

  • Symbol: INA190A5IDDFR
  • Footprint: Package_TO_SOT_SMD:TSOT-23-8
  • 3D model: TSOT-23-8 (KiCad packages3D, STEP)
  • 3D model files: ina190a5iddfr-etched.step / ina190a5iddfr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina190a5iddfr.step / ina190a5iddfr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (45 pp, sha256 1a17f09a74053f80, retrieved 2026-10-23, tier: manufacturer)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF