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INA190A5IDDFR
Public Made by Adomby adom
Texas Instruments Current-Sensing Amplifiers, TSOT-23-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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INA190A5IDDFR
Texas Instruments · Current-Sensing Amplifiers · TSOT-23-8
INA190A5IDDFR from Texas Instruments, in a TSOT-23-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VS | power_in | Power supply, 1.7 V to 5.5 V. |
| 2 | ENABLE | input | Enable pin: driven to VS the device is on as a current sense amplifier; driven to GND the device is off, supply current is reduced and the output is high-impedance; must be driven externally or connected to VS if not used. |
| 3 | REF | input | Reference input that enables bidirectional current sensing with an externally applied voltage. |
| 4 | GND | power_in | Analog ground. |
| 5 | OUT | output | Analog voltage output that is the gained up voltage difference from IN+ to IN-, offset by the voltage applied to the REF pin. |
| 6 | NC | unconnected | Not internally connected; either float this pin or connect to any voltage between GND and VS. |
| 7 | IN+ | input | Current-sense amplifier positive input; for high-side applications connect to bus voltage side of sense resistor, for low-side applications connect to load side of sense resistor. |
| 8 | IN- | input | Current-sense amplifier negative input; for high-side applications connect to load side of sense resistor, for low-side applications connect to ground side of sense resistor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TSOT-23-8 |
| Category | Operational Amplifier/Comparator |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VS | 6 | V | 4 | |||
| Differential analog input voltage | VIN+ - VIN- | -42 | 42 | V | (VIN+), (VIN-) | 4 | |
| Analog input voltage wrt GND | VIN+, VIN- | -0.3 | 42 | V | GND, 0.3 to 42, with respect to GND | 4 | |
| ENABLE voltage | VENABLE | -0.3 | 6 | V | GND, 0.3 to 6 | 4 | |
| REF, OUT voltage | -0.3 | V | GND, 0.3 to (VS) + 0.3 | 4 | |||
| Input current into any pin | 5 | mA | 4 | ||||
| Operating temperature | TA | -55 | 150 | °C | 4 | ||
| Junction temperature | TJ | 150 | °C | 4 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| ESD HBM | V(ESD) | -3000 | 3000 | V | Human-body model per ANSI/ESDA/JEDEC JS-001 | 4 | |
| ESD CDM | V(ESD) | -1000 | 1000 | V | Charged-device model per JESD22-C101 | 4 | |
| Common-mode input range | VCM | -0.2 | 40 | V | GND, 0.2 to 40 | 4 | |
| Input pin voltage range | VIN+, VIN- | -0.2 | 40 | V | GND, 0.2 to 40 | 4 | |
| Operating supply voltage | VS | 1.7 | 5.5 | V | 4 | ||
| Reference pin voltage range | VREF | 0 | V | GND to VS | 4 | ||
| Operating free-air temperature | TA | -40 | 125 | °C | 4 | ||
| Junction-to-ambient thermal resistance | RθJA | 170.7 | °C/W | DDF (SOT23) 8 pins | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 132.7 | °C/W | DDF (SOT23) 8 pins | 4 | ||
| Junction-to-board thermal resistance | RθJB | 65.3 | °C/W | DDF (SOT23) 8 pins | 4 | ||
| Junction-to-top characterization parameter | ΨJT | 45.7 | °C/W | DDF (SOT23) 8 pins | 4 | ||
| Junction-to-board characterization parameter | ΨJB | 65.2 | °C/W | DDF (SOT23) 8 pins | 4 | ||
| Common-mode rejection ratio | CMRR | 132 | 150 | dB | VSENSE = 0 mV, VIN+ = -0.1 V to 40 V, TA = -40°C to +125°C | 5 | |
| Offset voltage, RTI | VOS | -3 | 15 | µV | VS = 1.8 V, VSENSE = 0 mV; printed -3 and ±15 | 5 | |
| Offset drift, RTI | dVOS/dT | 10 | 80 | nV/°C | VSENSE = 0 mV, TA = -40°C to +125°C | 5 | |
| Power-supply rejection ratio, RTI | PSRR | -1 | 5 | µV/V | VSENSE = 0 mV, VS = 1.7 V to 5.5 V; printed -1 and ±5 | 5 | |
| Input bias current | IIB | 0.5 | 3 | nA | VSENSE = 0 mV | 5 | |
| Input offset current | IIO | 0.07 | nA | VSENSE = 0 mV; printed ±0.07 | 5 | ||
| Gain (A5) | G | 500 | V/V | A5 devices | 5 | ||
| Gain error (A5) | EG | -0.08 | 0.4 | % | VOUT = 0.1 V to VS, 0.1 V, A5 devices; printed -0.08% and ±0.4% | 5 | |
| Gain error drift | 2 | 7 | ppm/°C | TA = -40°C to +125°C | 5 | ||
| Nonlinearity error | 0.01 | % | VOUT = 0.1 V to VS, 0.1 V; printed ±0.01% | 5 | |||
| Reference voltage rejection ratio (A5) | RVRR | 0.25 | 3 | µV/V | VREF = 100 mV to VS, 100 mV, TA = -40°C to +125°C, A4, A5 devices; printed ±0.25 and ±3 | 5 | |
| Maximum capacitive load | 1 | nF | No sustained oscillation | 5 | |||
| Swing to VS power-supply rail | VSP | -20 | -40 | mV | VS = 1.8 V, RL = 10 kΩ to GND, TA = -40°C to +125°C; printed (VS), 20 typ, (VS), 40 max | 5 | |
| Swing to GND | VSN | 0.05 | 1 | mV | VS = 1.8 V, RL = 10 kΩ to GND, TA = -40°C to +125°C, VSENSE = -10 mV, VREF = 0 V; printed (VGND)+0.05 typ, (VGND)+1 max | 5 | |
| Zero current output voltage (A5) | VZL | 3 | 9 | mV | VS = 1.8 V, RL = 10 kΩ to GND, TA = -40°C to +125°C, VSENSE = 0 mV, VREF = 0 V, A5 devices; (VGND)+3 typ, (VGND)+9 max | 5 | |
| Bandwidth (A5) | BW | 27 | kHz | A5 devices, CLOAD = 10 pF | 5 | ||
| Slew rate | SR | 0.3 | V/µs | VS = 5.0 V, VOUT = 0.5 V to 4.5 V | 5 | ||
| Settling time | tS | 30 | µs | From current step to within 1% of final value | 5 | ||
| Voltage noise density | 75 | nV/√Hz | 6 | ||||
| ENABLE leakage input current | IEN | 1 | 100 | nA | 0 V ≤ VENABLE ≤ VS | 6 | |
| ENABLE high-level input voltage | VIH | 6 | V | min 0.7 × VS | 6 | ||
| ENABLE low-level input voltage | VIL | 0 | V | max 0.3 × VS | 6 | ||
| ENABLE hysteresis | VHYS | 300 | mV | 6 | |||
| Output leakage disabled | IODIS | 1 | 5 | µA | VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V | 6 | |
| Quiescent current | IQ | 48 | 65 | µA | VS = 1.8 V, VSENSE = 0 mV | 6 | |
| Quiescent current over temperature | IQ | 90 | µA | VS = 1.8 V, VSENSE = 0 mV, TA = -40°C to +125°C | 6 | ||
| Quiescent current disabled | IQDIS | 10 | 100 | nA | VENABLE = 0 V, VSENSE = 0 mV | 6 |
CAD (KiCad official)
- Symbol:
INA190A5IDDFR - Footprint:
Package_TO_SOT_SMD:TSOT-23-8 - 3D model: TSOT-23-8 (KiCad packages3D, STEP)
- 3D model files:
ina190a5iddfr-etched.step/ina190a5iddfr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ina190a5iddfr.step/ina190a5iddfr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (45 pp, sha256
1a17f09a74053f80, retrieved 2026-10-23, tier: manufacturer) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).