component
5LN01M-TL-H
Public Made by Adomby adom
onsemi MOSFETs, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown5LN01M-TL-H
onsemi · MOSFETs · SOT-323-3
5LN01M-TL-H from onsemi, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage is ±10 V. |
| 2 | Source | passive | Source terminal of the MOSFET; the datasheet gives no separate pin-level limit beyond the absolute maximum ratings. |
| 3 | Drain | passive | Drain terminal of the MOSFET; the drain-to-source voltage is rated 50 V and the DC drain current 0.1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-323-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 50 | V | 1 | |||
| Gate to Source Voltage | VGSS | -10 | 10 | V | 1 | ||
| Drain Current (DC) | ID | 0.1 | A | 1 | |||
| Drain Current (Pulse) | IDP | 0.4 | A | PW≤10μs, duty cycle≤1% | 1 | ||
| Allowable Power Dissipation | PD | 0.15 | W | 1 | |||
| Channel Temperature | Tch | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Drain to Source Breakdown Voltage | V(BR)DSS | 50 | V | ID=1mA, VGS=0V | 2 | ||
| Zero-Gate Voltage Drain Current | IDSS | 1 | μA | VDS=50V, VGS=0V | 2 | ||
| Gate to Source Leakage Current | IGSS | -10 | 10 | μA | VGS=±8V, VDS=0V | 2 | |
| Cutoff Voltage | VGS(off) | 0.4 | 1.3 | V | VDS=10V, ID=100μA | 2 | |
| Forward Transfer Admittance | /yfs/ | 0.13 | 0.18 | S | VDS=10V, ID=50mA | 2 | |
| Static Drain to Source On-State Resistance (RDS(on)1) | RDS(on)1 | 6 | 7.8 | Ω | ID=50mA, VGS=4V | 2 | |
| Static Drain to Source On-State Resistance (RDS(on)2) | RDS(on)2 | 7.1 | 9.9 | Ω | ID=30mA, VGS=2.5V | 2 | |
| Static Drain to Source On-State Resistance (RDS(on)3) | RDS(on)3 | 10 | 20 | Ω | ID=10mA, VGS=1.5V | 2 | |
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | IS=100mA, VGS=0V | 2 | |
| Input Capacitance | Ciss | 6.6 | pF | VDS=10V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 4.7 | pF | VDS=10V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 1.7 | pF | VDS=10V, f=1MHz | 2 | ||
| Turn-ON Delay Time | td(on) | 18 | ns | See specified Test Circuit. | 2 | ||
| Rise Time | tr | 42 | ns | See specified Test Circuit. | 2 | ||
| Turn-OFF Delay Time | td(off) | 190 | ns | See specified Test Circuit. | 2 | ||
| Fall Time | tf | 105 | ns | See specified Test Circuit. | 2 | ||
| Total Gate Charge | Qg | 1.57 | nC | VDS=10V, VGS=10V, ID=100mA | 2 | ||
| Gate to Source Charge | Qgs | 0.2 | nC | VDS=10V, VGS=10V, ID=100mA | 2 | ||
| Gate to Drain Miller Charge | Qgd | 0.32 | nC | VDS=10V, VGS=10V, ID=100mA | 2 |
CAD (KiCad official)
- Symbol:
5LN01M-TL-H - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files:
5ln01m-tl-h-etched.step/5ln01m-tl-h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);5ln01m-tl-h.step/5ln01m-tl-h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
e0993d380d45fe5d, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).