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SI2318CDS-T1-BE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2318CDS-T1-BE3
Vishay Intertech · MOSFETs · SOT-23(TO-236)
SI2318CDS-T1-BE3 from Vishay Intertech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±20 V and a gate-source threshold of 1.2 V to 2.5 V. |
| 2 | S | passive | Source of the N-channel MOSFET; the continuous source-drain diode current is rated at 1.75 A at TC = 25 °C and 1.04 A at TA = 25 °C, with a 20 A pulsed diode current. |
| 3 | D | passive | Drain of the N-channel MOSFET; the drain-source voltage is rated at 40 V and the continuous drain current at 5.6 A (TC = 25 °C, limited by the package). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 40 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 5.6 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous drain current | ID | 4.5 | A | TJ = 150 °C; TC = 70 °C | 1 | ||
| Continuous drain current | ID | 4.3 | A | TA = 25 °C; surface mounted, t = 5 s | 1 | ||
| Continuous drain current | ID | 3.5 | A | TA = 70 °C; surface mounted, t = 5 s | 1 | ||
| Pulsed drain current | IDM | 20 | A | 1 | |||
| Continuous source-drain diode current | IS | 1.75 | A | TC = 25 °C | 1 | ||
| Continuous source-drain diode current | IS | 1.04 | A | TA = 25 °C; surface mounted, t = 5 s | 1 | ||
| Maximum power dissipation | PD | 2.1 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 1.3 | W | TC = 70 °C | 1 | ||
| Maximum power dissipation | PD | 1.25 | W | TA = 25 °C; surface mounted, t = 5 s | 1 | ||
| Maximum power dissipation | PD | 0.8 | W | TA = 70 °C; surface mounted, t = 5 s | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 260 | °C | 1 | ||||
| Maximum junction-to-ambient | RthJA | 80 | 100 | °C/W | t ≤ 5 s; surface mounted (notes b, d) | 1 | |
| Maximum junction-to-foot (drain) | RthJF | 40 | 60 | °C/W | Steady state | 1 | |
| Maximum junction-to-ambient, steady state (note d) | RthJA | 125 | °C/W | Steady state | 1 | ||
| Drain-source breakdown voltage | VDS | 40 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 1.2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 40 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | μA | VDS = 40 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-state drain current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.035 | 0.042 | Ω | VGS = 10 V, ID = 4.3 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.041 | 0.051 | Ω | VGS = 4.5 V, ID = 3.9 A | 2 | |
| Total gate charge | Qg | 5.8 | 9 | nC | VDS = 20 V, VGS = 10 V, ID = 4.3 A | 2 | |
| Total gate charge | Qg | 2.9 | 6 | nC | VDS = 20 V, VGS = 4.5 V, ID = 4.3 A | 2 | |
| Gate resistance | Rg | 0.6 | 3.3 | 6.6 | Ω | f = 1 MHz | 2 |
| Turn-on delay time (VGEN = 4.5 V) | td(on) | 12 | 20 | ns | VDD = 20 V, RL = 5.7 Ω, ID 3.5 A, VGEN = 4.5 V, Rg = 1 | 2 | |
| Rise time (VGEN = 4.5 V) | tr | 50 | 75 | ns | 2 | ||
| Turn-off delay time (VGEN = 4.5 V) | td(off) | 10 | 20 | ns | 2 | ||
| Fall time (VGEN = 4.5 V) | tf | 8 | 16 | ns | 2 | ||
| Turn-on delay time (VGEN = 10 V) | td(on) | 7 | 14 | ns | 2 | ||
| Rise time (VGEN = 10 V) | tr | 20 | 30 | ns | 2 | ||
| Turn-off delay time (VGEN = 10 V) | td(off) | 14 | 21 | ns | 2 | ||
| Fall time (VGEN = 10 V) | tf | 8 | 16 | ns | 2 | ||
| Continuous source-drain diode current | IS | 1.75 | A | TC = 25 °C | 2 | ||
| Pulse diode forward current | ISM | 20 | A | 2 | |||
| Body diode voltage | VSD | 0.85 | 1.2 | V | IS = 3.5 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 15 | 23 | ns | IF = 3.5 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body diode reverse recovery charge | Qrr | 7 | 14 | nC | 2 |
CAD (KiCad official)
- Symbol:
SI2318CDS-T1-BE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
si2318cds-t1-be3-etched.step/si2318cds-t1-be3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2318cds-t1-be3.step/si2318cds-t1-be3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
51b97edaff264c54, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).