component
TDM3405
Public Made by Adomby adom
Techcode Semicon MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTDM3405
Techcode Semicon · MOSFETs · DFN5x6-8
TDM3405 from Techcode Semicon, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; drain-source voltage rated -40 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; drain-source voltage rated -40 V. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; drain-source voltage rated -40 V. |
| 4 | G | input | Gate of the P-channel MOSFET with an integrated ESD protection diode; gate-source voltage rated +/-25 V and threshold of -1.5 V min to -2.5 V max. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; continuous drain current up to -55 A at TC=25C. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; continuous drain current up to -55 A at TC=25C. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; continuous drain current up to -55 A at TC=25C. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; continuous drain current up to -55 A at TC=25C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Techcode Semicon |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | 25 | V | 1 | |||
| Continuous Drain Current | ID (TA=25℃) | -17 | A | VGS=-10V, note 1 (surface mounted on 1in2 pad, t≤10sec) | 1 | ||
| Continuous Drain Current | ID (TA=70℃) | -14 | A | VGS=-10V, note 1 | 1 | ||
| 300μs Pulsed Drain Current | IDP(TA=25℃) | -69 | A | 300μs pulsed, tested, note 1 | 1 | ||
| Continuous Drain Current | ID (TC=25℃) | -55 | A | VGS=-10V, note 2 | 1 | ||
| Continuous Drain Current | ID (TC=100℃) | -35 | A | VGS=-10V, note 2 | 1 | ||
| 300μs Pulsed Drain Current | IDP(TC=25℃) | -222 | A | 300μs pulsed, tested, note 2 | 1 | ||
| Diode Continuous Forward Current | IS | -27 | A | note 2 | 1 | ||
| Maximum Power Dissipation | PD(TA=25℃) | 5 | W | note 1 | 1 | ||
| Maximum Power Dissipation | PD(TA=70℃) | 3.2 | W | note 1 | 1 | ||
| Maximum Power Dissipation | PD(TC=25℃) | 52 | W | note 2 | 1 | ||
| Maximum Power Dissipation | PD(TC=100℃) | 20 | W | note 2 | 1 | ||
| Maximum Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 60 | ℃/W | Surface mounted on 1in2 pad area, t≤10sec, note 1 | 2 | ||
| Thermal Resistance-Junction to Case | RθJC | 2.4 | ℃/W | note 2 | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-32, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=-4.5V, IDS=-15A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 7.5 | 9.4 | mΩ | VGS=-10V, IDS=-25A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 6.6 | 8 | mΩ | VGS=-20V, IDS=-25A | 2 | |
| Input Capacitance | Ciss | 2780 | 3610 | PF | VDS=-20V, VGS=0V, F=1.0MHz | 2 | |
| Turn-on Delay Time | td(on) | 17 | 30 | nS | VDD=-20V, RL=20Ω, VGEN=-10V, RG=6Ω, IDS=-1A | 2 | |
| Turn-on Rise Time | tr | 14 | 25 | nS | VDD=-20V, RL=20Ω, VGEN=-10V, RG=6Ω, IDS=-1A | 2 | |
| Turn-Off Delay Time | td(off) | 59 | 106 | nS | VDD=-20V, RL=20Ω, VGEN=-10V, RG=6Ω, IDS=-1A | 2 | |
| Turn-Off Fall Time | tf | 22 | 40 | nS | VDD=-20V, RL=20Ω, VGEN=-10V, RG=6Ω, IDS=-1A | 2 | |
| Total Gate Charge | Qg | 59 | 83 | nC | VDS=-20V, IDS=-25A, VGS=-10V | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | VGS=0V, ISD=-1A | 2 |
CAD (KiCad official)
- Symbol:
TDM3405 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
tdm3405-etched.step/tdm3405-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tdm3405.step/tdm3405.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Techcode Semicon datasheet (7 pp, sha256
4cae9aa56d2e2825, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).