component

TDM3405

Public Made by Adom

by adom

Techcode Semicon MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorstdm3405factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers tdm3405: viewers · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago
tdm3405-etched.glb Publish 0.1.0 · Ray 23d ago
tdm3405-etched.step tdm3405: factory component page (tier=lcsc) · Ray 23d ago
tdm3405-hero.glb tdm3405: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
tdm3405-hero.overlay.json Publish 0.1.0 · Ray 23d ago
tdm3405.glb Publish 0.1.0 · Ray 23d ago
tdm3405.kicad_mod Publish 0.1.0 · Ray 23d ago
tdm3405.kicad_sym Publish 0.1.0 · Ray 23d ago
tdm3405.lbr Publish 0.1.0 · Ray 23d ago
tdm3405.step Publish 0.1.0 · Ray 23d ago

TDM3405

Techcode Semicon · MOSFETs · DFN5x6-8

TDM3405 from Techcode Semicon, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3; drain-source voltage rated -40 V.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3; drain-source voltage rated -40 V.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2; drain-source voltage rated -40 V.
4 G input Gate of the P-channel MOSFET with an integrated ESD protection diode; gate-source voltage rated +/-25 V and threshold of -1.5 V min to -2.5 V max.
5 D passive Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; continuous drain current up to -55 A at TC=25C.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; continuous drain current up to -55 A at TC=25C.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; continuous drain current up to -55 A at TC=25C.
8 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; continuous drain current up to -55 A at TC=25C.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Techcode Semicon
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS 25 V 1
Continuous Drain Current ID (TA=25℃) -17 A VGS=-10V, note 1 (surface mounted on 1in2 pad, t≤10sec) 1
Continuous Drain Current ID (TA=70℃) -14 A VGS=-10V, note 1 1
300μs Pulsed Drain Current IDP(TA=25℃) -69 A 300μs pulsed, tested, note 1 1
Continuous Drain Current ID (TC=25℃) -55 A VGS=-10V, note 2 1
Continuous Drain Current ID (TC=100℃) -35 A VGS=-10V, note 2 1
300μs Pulsed Drain Current IDP(TC=25℃) -222 A 300μs pulsed, tested, note 2 1
Diode Continuous Forward Current IS -27 A note 2 1
Maximum Power Dissipation PD(TA=25℃) 5 W note 1 1
Maximum Power Dissipation PD(TA=70℃) 3.2 W note 1 1
Maximum Power Dissipation PD(TC=25℃) 52 W note 2 1
Maximum Power Dissipation PD(TC=100℃) 20 W note 2 1
Maximum Junction Temperature TJ 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance-Junction to Ambient RθJA 60 ℃/W Surface mounted on 1in2 pad area, t≤10sec, note 1 2
Thermal Resistance-Junction to Case RθJC 2.4 ℃/W note 2 2
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-32, VGS=0V 2
Gate-Body Leakage Current IGSS -10 10 μA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1.5 -2 -2.5 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 11 15 mΩ VGS=-4.5V, IDS=-15A 2
Drain-Source On-State Resistance RDS(ON) 7.5 9.4 mΩ VGS=-10V, IDS=-25A 2
Drain-Source On-State Resistance RDS(ON) 6.6 8 mΩ VGS=-20V, IDS=-25A 2
Input Capacitance Ciss 2780 3610 PF VDS=-20V, VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 17 30 nS VDD=-20V, RL=20Ω, VGEN=-10V, RG=6Ω, IDS=-1A 2
Turn-on Rise Time tr 14 25 nS VDD=-20V, RL=20Ω, VGEN=-10V, RG=6Ω, IDS=-1A 2
Turn-Off Delay Time td(off) 59 106 nS VDD=-20V, RL=20Ω, VGEN=-10V, RG=6Ω, IDS=-1A 2
Turn-Off Fall Time tf 22 40 nS VDD=-20V, RL=20Ω, VGEN=-10V, RG=6Ω, IDS=-1A 2
Total Gate Charge Qg 59 83 nC VDS=-20V, IDS=-25A, VGS=-10V 2
Diode Forward Voltage VSD -0.7 -1 V VGS=0V, ISD=-1A 2

CAD (KiCad official)

  • Symbol: TDM3405
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: tdm3405-etched.step / tdm3405-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tdm3405.step / tdm3405.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Techcode Semicon datasheet (7 pp, sha256 4cae9aa56d2e2825, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF