component
IPA030N10NF2SXKSA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPA030N10NF2SXKSA1
Infineon Technologies · MOSFETs · TO-220
IPA030N10NF2SXKSA1 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated VGS -20 V to +20 V with threshold VGS(th) 2.2 V min to 3.8 V max at ID=169 µA. |
| 2 | Drain | passive | Drain terminal with VDS rating of 100 V and continuous drain current of 83 A at TC=25°C, VGS=10 V. |
| 3 | Source | passive | Source terminal of the MOSFET, with RDS(on) max 3.0 mΩ at VGS=10 V, ID=50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 83 | A | VGS=10V, TC=25°C | 3 | ||
| Continuous drain current | ID | 59 | A | VGS=10V, TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 332 | A | TA=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 598 | mJ | ID=72A, RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 41 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance, junction - case | RthJC | 3.7 | °C/W | 3 | |||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=1mA | 3 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS, ID=169µA | 3 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=100V, VGS=0V, Tj=25°C | 3 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=100V, VGS=0V, Tj=125°C | 3 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20V, VDS=0V | 3 | |
| Drain-source on-state resistance | RDS(on) | 2.6 | 3 | mΩ | VGS=10V, ID=50A | 3 | |
| Drain-source on-state resistance | RDS(on) | 2.98 | 3.6 | mΩ | VGS=6V, ID=25A | 3 | |
| Transconductance | gfs | 74 | S | /VDS/≥2/ID/RDS(on)max, ID=50A | 3 | ||
| Gate charge total | Qg | 103 | 154 | nC | VDD=50V, ID=50A, VGS=0 to 10V | 4 | |
| Diode continuous forward current | IS | 32 | A | TC=25°C | 4 | ||
| Diode pulse current | IS,pulse | 332 | A | TC=25°C | 4 | ||
| Diode forward voltage | VSD | 0.81 | 1.2 | V | VGS=0V, IF=25A, Tj=25°C | 4 | |
| Gate resistance | RG | 1.8 | Ω | 3 | |||
| Input capacitance | Ciss | 7300 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Output capacitance | Coss | 1100 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Crss | 49 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Turn-on delay time | td(on) | 20 | ns | VDD=50V, VGS=10V, ID=50A, RG,ext=1.6Ω | 4 | ||
| Rise time | tr | 65 | ns | VDD=50V, VGS=10V, ID=50A, RG,ext=1.6Ω | 4 | ||
| Turn-off delay time | td(off) | 47 | ns | VDD=50V, VGS=10V, ID=50A, RG,ext=1.6Ω | 4 | ||
| Fall time | tf | 26 | ns | VDD=50V, VGS=10V, ID=50A, RG,ext=1.6Ω | 4 | ||
| Reverse recovery time | trr | 44 | ns | VR=50V, IF=25A, diF/dt=500A/µs | 4 | ||
| Reverse recovery charge | Qrr | 327 | nC | VR=50V, IF=25A, diF/dt=500A/µs | 4 | ||
| Output charge | Qoss | 131 | nC | VDS=50V, VGS=0V | 4 |
CAD (KiCad official)
- Symbol:
IPA030N10NF2SXKSA1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ipa030n10nf2sxksa1-etched.step/ipa030n10nf2sxksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipa030n10nf2sxksa1.step/ipa030n10nf2sxksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
6ba0f25abeed59de, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).