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IPA030N10NF2SXKSA1

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Infineon Technologies MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPA030N10NF2SXKSA1

Infineon Technologies · MOSFETs · TO-220

IPA030N10NF2SXKSA1 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, rated VGS -20 V to +20 V with threshold VGS(th) 2.2 V min to 3.8 V max at ID=169 µA.
2 Drain passive Drain terminal with VDS rating of 100 V and continuous drain current of 83 A at TC=25°C, VGS=10 V.
3 Source passive Source terminal of the MOSFET, with RDS(on) max 3.0 mΩ at VGS=10 V, ID=50 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 83 A VGS=10V, TC=25°C 3
Continuous drain current ID 59 A VGS=10V, TC=100°C 3
Pulsed drain current ID,pulse 332 A TA=25°C 3
Avalanche energy, single pulse EAS 598 mJ ID=72A, RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 41 W TC=25°C 3
Operating and storage temperature Tj,Tstg -55 175 °C 3
Thermal resistance, junction - case RthJC 3.7 °C/W 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=1mA 3
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS, ID=169µA 3
Zero gate voltage drain current IDSS 0.1 1 µA VDS=100V, VGS=0V, Tj=25°C 3
Zero gate voltage drain current IDSS 10 100 µA VDS=100V, VGS=0V, Tj=125°C 3
Gate-source leakage current IGSS 10 100 nA VGS=20V, VDS=0V 3
Drain-source on-state resistance RDS(on) 2.6 3 mΩ VGS=10V, ID=50A 3
Drain-source on-state resistance RDS(on) 2.98 3.6 mΩ VGS=6V, ID=25A 3
Transconductance gfs 74 S /VDS/≥2/ID/RDS(on)max, ID=50A 3
Gate charge total Qg 103 154 nC VDD=50V, ID=50A, VGS=0 to 10V 4
Diode continuous forward current IS 32 A TC=25°C 4
Diode pulse current IS,pulse 332 A TC=25°C 4
Diode forward voltage VSD 0.81 1.2 V VGS=0V, IF=25A, Tj=25°C 4
Gate resistance RG 1.8 Ω 3
Input capacitance Ciss 7300 pF VGS=0V, VDS=50V, f=1MHz 4
Output capacitance Coss 1100 pF VGS=0V, VDS=50V, f=1MHz 4
Reverse transfer capacitance Crss 49 pF VGS=0V, VDS=50V, f=1MHz 4
Turn-on delay time td(on) 20 ns VDD=50V, VGS=10V, ID=50A, RG,ext=1.6Ω 4
Rise time tr 65 ns VDD=50V, VGS=10V, ID=50A, RG,ext=1.6Ω 4
Turn-off delay time td(off) 47 ns VDD=50V, VGS=10V, ID=50A, RG,ext=1.6Ω 4
Fall time tf 26 ns VDD=50V, VGS=10V, ID=50A, RG,ext=1.6Ω 4
Reverse recovery time trr 44 ns VR=50V, IF=25A, diF/dt=500A/µs 4
Reverse recovery charge Qrr 327 nC VR=50V, IF=25A, diF/dt=500A/µs 4
Output charge Qoss 131 nC VDS=50V, VGS=0V 4

CAD (KiCad official)

  • Symbol: IPA030N10NF2SXKSA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ipa030n10nf2sxksa1-etched.step / ipa030n10nf2sxksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipa030n10nf2sxksa1.step / ipa030n10nf2sxksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 6ba0f25abeed59de, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF