component
IRF640NS
Public Made by Adomby adom
Minos MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF640NS
Minos · MOSFETs · TO-263
IRF640NS from Minos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±30 V with a threshold of 2.0 to 4.0 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain (center lead and mounting tab); drain-to-source voltage is rated 200 V with 18 A continuous and 72 A pulsed drain current. |
| 3 | S | passive | Source; body diode continuous source current is 18 A and pulsed 72 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 200 | V | 1 | |||
| Continuous Drain Current | ID | 18 | A | 1 | |||
| Continuous Drain Current | ID | 11 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 72 | A | Note1: pulse width limited by maximum junction temperature | 1 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 580 | mJ | Note2: L=2.7mH, VDS=50V, Start TJ=25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note3: ISD=18A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 130 | W | TO-220, TO-251, TO-252 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 2 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 2 | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.84 | ℃/W | No FullPAK | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | No FullPAK | 2 | ||
| Drain to Source Breakdown Voltage | VDSS | 200 | V | VGS=0V, ID=250µA | 2 | ||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.25 | V/℃ | ID=250uA, Reference25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =200V, VGS= 0V, Tj = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS =160V, VGS= 0V, Tj = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 0.13 | 0.18 | Ω | VGS=10V, ID=7.5A(Note4) | 3 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA(Note4) | 3 | |
| Continuous Source Current (Body Diode) | IS | 18 | A | TC=25 °C | 3 | ||
| Maximum Pulsed Current (Body Diode) | ISM | 72 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=18A, VGS=0V(Note4) | 4 |
CAD (KiCad official)
- Symbol:
IRF640NS - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
irf640ns-etched.step/irf640ns-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf640ns.step/irf640ns.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (11 pp, sha256
9ee9eb1cb78c5afa, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).