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Contents

README

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IRF640NS

Minos · MOSFETs · TO-263

IRF640NS from Minos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated ±30 V with a threshold of 2.0 to 4.0 V at VDS = VGS, ID = 250 µA.
2 D passive Drain (center lead and mounting tab); drain-to-source voltage is rated 200 V with 18 A continuous and 72 A pulsed drain current.
3 S passive Source; body diode continuous source current is 18 A and pulsed 72 A.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 200 V 1
Continuous Drain Current ID 18 A 1
Continuous Drain Current ID 11 A TC = 100 °C 1
Pulsed Drain Current IDM 72 A Note1: pulse width limited by maximum junction temperature 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 580 mJ Note2: L=2.7mH, VDS=50V, Start TJ=25℃ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns Note3: ISD=18A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ 1
Power Dissipation PD 130 W TO-220, TO-251, TO-252 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 2
Maximum Temperature for Soldering TL 300 ℃ 2
Junction-to-Case Thermal Resistance RθJC 0.84 ℃/W No FullPAK 2
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W No FullPAK 2
Drain to Source Breakdown Voltage VDSS 200 V VGS=0V, ID=250µA 2
Bvdss Temperature Coefficient ΔBVDSS/ΔTJ 0.25 V/℃ ID=250uA, Reference25℃ 2
Drain to Source Leakage Current IDSS 1 µA VDS =200V, VGS= 0V, Tj = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS =160V, VGS= 0V, Tj = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 0.13 0.18 Ω VGS=10V, ID=7.5A(Note4) 3
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA(Note4) 3
Continuous Source Current (Body Diode) IS 18 A TC=25 °C 3
Maximum Pulsed Current (Body Diode) ISM 72 A 3
Diode Forward Voltage VSD 1.2 V IS=18A, VGS=0V(Note4) 4

CAD (KiCad official)

  • Symbol: IRF640NS
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: irf640ns-etched.step / irf640ns-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf640ns.step / irf640ns.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (11 pp, sha256 9ee9eb1cb78c5afa, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF