component
HSM6901
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSM6901
HUASHUO · MOSFETs · SOP-8
HSM6901 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (the datasheet's pin diagram labels it S1); gate-source voltage limit is ±20 V. |
| 2 | G1 | input | Gate of MOSFET 1; absolute maximum VGS is ±20 V with a gate threshold of 1.2 to 2.5 V in magnitude. |
| 3 | S2 | passive | Source of MOSFET 2 (the datasheet's pin diagram labels it S2); gate-source voltage limit is ±20 V. |
| 4 | G2 | input | Gate of MOSFET 2; absolute maximum VGS is ±20 V with a gate threshold of 1.2 to 2.5 V in magnitude. |
| 5 | D2 | passive | Drain of MOSFET 2, tied to pin 6; drain-source voltage rating is 60 V in magnitude. |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5; drain-source voltage rating is 60 V in magnitude. |
| 7 | D1 | passive | Drain of MOSFET 1, tied to pin 8; drain-source voltage rating is 60 V in magnitude. |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7; drain-source voltage rating is 60 V in magnitude. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Channel Drain-Source Voltage | VDS | 60 | V | 1 | |||
| P-Channel Drain-Source Voltage | VDS | -60 | V | 1 | |||
| N-Channel Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-Channel Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-Channel Continuous Drain Current | ID | 4.8 | A | TA=25℃, VGS @ 10V | 1 | ||
| P-Channel Continuous Drain Current | ID | -3.7 | A | TA=25℃, VGS @ 10V | 1 | ||
| N-Channel Continuous Drain Current | ID | 3.8 | A | TA=70℃, VGS @ 10V | 1 | ||
| P-Channel Continuous Drain Current | ID | -3 | A | TA=70℃, VGS @ 10V | 1 | ||
| N-Channel Pulsed Drain Current | IDM | 9.6 | A | 1 | |||
| P-Channel Pulsed Drain Current | IDM | -7.5 | A | 1 | |||
| N-Channel Single Pulse Avalanche Energy | EAS | 25.5 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=22.6A | 1 | ||
| P-Channel Single Pulse Avalanche Energy | EAS | 35.3 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A | 1 | ||
| N-Channel Avalanche Current | IAS | 22.6 | A | 1 | |||
| P-Channel Avalanche Current | IAS | -26.6 | A | 1 | |||
| N-Channel Total Power Dissipation | PD | 1.5 | W | TA=25℃ | 1 | ||
| P-Channel Total Power Dissipation | PD | 1.5 | W | TA=25℃ | 1 | ||
| N-Channel Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| P-Channel Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| N-Channel Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| P-Channel Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 36 | ℃/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| N-Channel Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| N-Channel Static Drain-Source On-Resistance | RDS(ON) | 32 | mΩ | VGS=10V, ID=4A | 2 | ||
| N-Channel Static Drain-Source On-Resistance | RDS(ON) | 38 | mΩ | VGS=4.5V, ID=2A | 2 | ||
| N-Channel Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-Channel Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| N-Channel Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 | ||
| N-Channel Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| N-Channel Continuous Source Current | IS | 4.8 | A | VG=VD=0V, Force Current | 2 | ||
| N-Channel Pulsed Source Current | ISM | 9.6 | A | 2 | |||
| N-Channel Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| P-Channel Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 3 | ||
| P-Channel Static Drain-Source On-Resistance | RDS(ON) | 70 | mΩ | VGS=-10V, ID=-3A | 3 | ||
| P-Channel Static Drain-Source On-Resistance | RDS(ON) | 105 | mΩ | VGS=-4.5V, ID=-2A | 3 | ||
| P-Channel Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-Channel Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 3 | ||
| P-Channel Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 3 | ||
| P-Channel Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| P-Channel Continuous Source Current | IS | -3.7 | A | VG=VD=0V, Force Current | 3 | ||
| P-Channel Pulsed Source Current | ISM | -7.5 | A | 3 | |||
| P-Channel Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
HSM6901 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm6901-etched.step/hsm6901-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm6901.step/hsm6901.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (9 pp, sha256
9c57ef18cb39f726, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).