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HSM6901

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HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSM6901

HUASHUO · MOSFETs · SOP-8

HSM6901 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (the datasheet's pin diagram labels it S1); gate-source voltage limit is ±20 V.
2 G1 input Gate of MOSFET 1; absolute maximum VGS is ±20 V with a gate threshold of 1.2 to 2.5 V in magnitude.
3 S2 passive Source of MOSFET 2 (the datasheet's pin diagram labels it S2); gate-source voltage limit is ±20 V.
4 G2 input Gate of MOSFET 2; absolute maximum VGS is ±20 V with a gate threshold of 1.2 to 2.5 V in magnitude.
5 D2 passive Drain of MOSFET 2, tied to pin 6; drain-source voltage rating is 60 V in magnitude.
6 D2 passive Drain of MOSFET 2, tied to pin 5; drain-source voltage rating is 60 V in magnitude.
7 D1 passive Drain of MOSFET 1, tied to pin 8; drain-source voltage rating is 60 V in magnitude.
8 D1 passive Drain of MOSFET 1, tied to pin 7; drain-source voltage rating is 60 V in magnitude.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Channel Drain-Source Voltage VDS 60 V 1
P-Channel Drain-Source Voltage VDS -60 V 1
N-Channel Gate-Source Voltage VGS -20 20 V 1
P-Channel Gate-Source Voltage VGS -20 20 V 1
N-Channel Continuous Drain Current ID 4.8 A TA=25℃, VGS @ 10V 1
P-Channel Continuous Drain Current ID -3.7 A TA=25℃, VGS @ 10V 1
N-Channel Continuous Drain Current ID 3.8 A TA=70℃, VGS @ 10V 1
P-Channel Continuous Drain Current ID -3 A TA=70℃, VGS @ 10V 1
N-Channel Pulsed Drain Current IDM 9.6 A 1
P-Channel Pulsed Drain Current IDM -7.5 A 1
N-Channel Single Pulse Avalanche Energy EAS 25.5 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=22.6A 1
P-Channel Single Pulse Avalanche Energy EAS 35.3 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A 1
N-Channel Avalanche Current IAS 22.6 A 1
P-Channel Avalanche Current IAS -26.6 A 1
N-Channel Total Power Dissipation PD 1.5 W TA=25℃ 1
P-Channel Total Power Dissipation PD 1.5 W TA=25℃ 1
N-Channel Storage Temperature Range TSTG -55 150 ℃ 1
P-Channel Storage Temperature Range TSTG -55 150 ℃ 1
N-Channel Operating Junction Temperature Range TJ -55 150 ℃ 1
P-Channel Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W Surface mounted on 1 inch2 FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 36 ℃/W Surface mounted on 1 inch2 FR-4 board with 2OZ copper 1
N-Channel Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
N-Channel Static Drain-Source On-Resistance RDS(ON) 32 mΩ VGS=10V, ID=4A 2
N-Channel Static Drain-Source On-Resistance RDS(ON) 38 mΩ VGS=4.5V, ID=2A 2
N-Channel Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS, ID=250uA 2
N-Channel Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
N-Channel Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
N-Channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
N-Channel Continuous Source Current IS 4.8 A VG=VD=0V, Force Current 2
N-Channel Pulsed Source Current ISM 9.6 A 2
N-Channel Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
P-Channel Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 3
P-Channel Static Drain-Source On-Resistance RDS(ON) 70 mΩ VGS=-10V, ID=-3A 3
P-Channel Static Drain-Source On-Resistance RDS(ON) 105 mΩ VGS=-4.5V, ID=-2A 3
P-Channel Gate Threshold Voltage VGS(th) -1.2 -1.5 -2.5 V VGS=VDS, ID=-250uA 3
P-Channel Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 3
P-Channel Drain-Source Leakage Current IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 3
P-Channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
P-Channel Continuous Source Current IS -3.7 A VG=VD=0V, Force Current 3
P-Channel Pulsed Source Current ISM -7.5 A 3
P-Channel Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: HSM6901
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm6901-etched.step / hsm6901-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm6901.step / hsm6901.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (9 pp, sha256 9c57ef18cb39f726, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF