component
RC65D270E
Public Made by Adomby adom
RealChip(正芯半导体) GaN Transistors(GaN HEMT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRC65D270E
RealChip(正芯半导体) · GaN Transistors(GaN HEMT) · TO-252
RC65D270E from RealChip(正芯半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the normally-off GaN HEMT, driven with VGS 0V to 10V in the datasheet test conditions and rated -20V to +20V (VGSS). |
| 2 | S | passive | Source, the short centre lead, which is also connected to the exposed bottom tab; the package configuration is listed as Source. |
| 3 | D | passive | Drain, rated 650V (VDSS) with 900V transient and 7.9A continuous current at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip(正芯半导体) |
| Package | TO-252 |
| Category | Gallium Nitride (GaN) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage (TJ = -55°C to 150°C) | VDSS | 650 | V | TJ = -55°C to 150°C | 2 | ||
| Drain to source voltage-transient | V(TR)DSS | 900 | V | Footnote a: off-state, spike duty cycle D<0.01, spike duration <1μs | 2 | ||
| Gate to source voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous drain current @TC=25°C | ID | 7.9 | A | TC=25°C; footnote b | 2 | ||
| Continuous drain current @TC=125°C | ID | 3.5 | A | TC=125°C; footnote b | 2 | ||
| Pulse drain current | IDM | 30 | A | Pulse width 100μs | 2 | ||
| Maximum power dissipation | PD | 32 | W | TC=25°C | 2 | ||
| Operating temperature, case | TC | -55 | 150 | °C | 2 | ||
| Operating temperature, junction | TJ | -55 | 150 | °C | 2 | ||
| Storage temperature | TS | -55 | 150 | °C | 2 | ||
| Junction-to-case thermal resistance | Rθ J C | 3.9 | °C /W | 3 | |||
| Drain-source voltage (breakdown) | V(BL)DSS | 650 | V | VGS= 0V | 4 | ||
| Drain-source on-resistance | RDS(on) | 270 | 320 | mΩ | VGS=10V, ID=1A, TJ=25°C | 4 | |
| Drain-to-source leakage current | IDSS | 10 | μA | VDS=650V, VGS= 0V, TJ=25°C | 4 | ||
| Drain-to-source leakage current | IDSS | 100 | μA | VDS=650V, VGS= 0V, TJ=150°C | 4 | ||
| Gate-to-source forward leakage current | IGSS | -100 | 100 | nA | VGS=±20V | 4 | |
| Source-Drain reverse voltage | VSD | 2.2 | V | VGS=0V, ISD=5A | 5 | ||
| Gate threshold voltage | VGS(th) | 1.9 | V | VDS=1V, IDS=1mA | 4 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th)/TJ | -7 | mV/°C | 4 | |||
| Drain-source on-resistance | RDS(on) | 570 | mΩ | VGS=10V, ID=1A, TJ=150°C | 4 | ||
| Input capacitance | CISS | 243 | pF | 4 | |||
| Output capacitance | COSS | 10 | pF | VGS=0V, VDS=400V, f=1MHz | 4 | ||
| Reverse capacitance | CRSS | 0.8 | pF | 4 | |||
| Total gate charge | QG | 7.2 | nC | 4 | |||
| Gate-source charge | QGS | 2.1 | nC | VDS=400V, VGS=0V to 10V, ID=1A | 4 | ||
| Gate-drain charge | QGD | 0.9 | nC | 4 | |||
| Output charge | QOSS | 17 | nC | VGS=0V, VDS=0V to 400V, f=1MHz | 4 | ||
| Turn-on delay | tD(on) | 6 | ns | VDS=400V, VGS=0V to 10V, ID=2.1A, RG-on(ext)=6.8Ω, RG-off(ext)=2.2Ω, L=250μH | 4 | ||
| Rise time | tR | 17 | ns | 4 | |||
| Turn-off delay | tD(off) | 7 | ns | 4 | |||
| Fall time | tF | 15 | ns | 4 | |||
| Reverse recovery time | tRR | 14 | ns | IF=5A, VDD=400V, dIF/dt=165A/μs | 5 | ||
| Reverse recovery charge | QRR | 6.5 | nC | 5 |
CAD (KiCad official)
- Symbol:
RC65D270E - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rc65d270e-etched.step/rc65d270e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc65d270e.step/rc65d270e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip(正芯半导体) datasheet (10 pp, sha256
3d8c65beaf4cd508, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).