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SI4559ADY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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README
markdownSI4559ADY-T1-GE3
Vishay Intertech · MOSFETs · SO-8
SI4559ADY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60 V, 5.3 A rated). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated at ±20 V gate-source maximum. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60 V, -3.9 A rated). |
| 4 | G2 | input | Gate of the P-channel MOSFET, rated at ±20 V gate-source maximum. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 6 (-60 V drain-source maximum). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 5 (-60 V drain-source maximum). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 8 (60 V drain-source maximum). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 7 (60 V drain-source maximum). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage (N-Ch) | VDS | 60 | V | VGS = 0 V, ID = 250 µA N-Ch | 2 | ||
| Drain-source breakdown voltage (P-Ch) | VDS | -60 | V | VGS = 0 V, ID = -250 µA P-Ch | 2 | ||
| Gate threshold voltage (N-Ch) | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA N-Ch | 2 | |
| Gate threshold voltage (P-Ch) | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA P-Ch | 2 | |
| Gate-body leakage (N-Ch) | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V N-Ch | 2 | ||
| Gate-body leakage (P-Ch) | IGSS | -100 | nA | VDS = 0 V, VGS = ± 20 V P-Ch | 2 | ||
| Zero gate voltage drain current (N-Ch) | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V N-Ch | 2 | ||
| Zero gate voltage drain current (P-Ch) | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V P-Ch | 2 | ||
| Zero gate voltage drain current at TJ = 55 °C (N-Ch) | IDSS | 10 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch | 2 | ||
| Zero gate voltage drain current at TJ = 55 °C (P-Ch) | IDSS | -10 | µA | VDS = -60 V, VGS = 0 V, TJ = 55 °C P-Ch | 2 | ||
| On-state drain current (N-Ch) | ID(on) | 20 | A | VDS 5 V, VGS = 10 V N-Ch | 2 | ||
| On-state drain current (P-Ch) | ID(on) | -25 | A | VDS -5 V, VGS = -10 V P-Ch | 2 | ||
| Drain-source on-state resistance (N-Ch) | RDS(on) | 0.058 | Ω | VGS = 10 V, ID = 4.3 A N-Ch | 2 | ||
| Drain-source on-state resistance (P-Ch) | RDS(on) | 0.12 | Ω | VGS = -10 V, ID = -3.1 A P-Ch | 2 | ||
| Drain-source on-state resistance (N-Ch) | RDS(on) | 0.072 | Ω | VGS = 4.5 V, ID = 3.9 A N-Ch | 2 | ||
| Drain-source on-state resistance (P-Ch) | RDS(on) | 0.15 | Ω | VGS = -4.5 V, ID = -0.2 A P-Ch | 2 | ||
| Total gate charge at VGS = 10 V (N-Ch) | Qg | 20 | nC | VDS = 30 V, VGS = 10 V, ID = 4.3 A N-Ch | 2 | ||
| Total gate charge at VGS = -10 V (P-Ch) | Qg | 22 | nC | VDS = -30 V, VGS = -10 V, ID = -3.1 A P-Ch | 2 | ||
| Total gate charge at VGS = 4.5 V (N-Ch) | Qg | 9 | nC | VDS = 30 V, VGS = 4.5 V, ID = 4.3 A N-Ch | 2 | ||
| Total gate charge at VGS = -4.5 V (P-Ch) | Qg | 12 | nC | VDS = -30 V, VGS = -4.5 V, ID = -3.1 A P-Ch | 2 | ||
| Gate resistance (N-Ch) | Rg | 3 | Ω | f = 1 MHz N-Ch | 2 | ||
| Gate resistance (P-Ch) | Rg | 20 | Ω | f = 1 MHz P-Ch | 2 | ||
| Body diode voltage (N-Ch) | VSD | 1.2 | V | IS = 1.7 A N-Ch | 3 | ||
| Body diode voltage (P-Ch) | VSD | -1.2 | V | IS = -2 A P-Ch | 3 | ||
| Continuous source-drain diode current (N-Ch) | IS | 2.6 | A | TC = 25 °C N-Ch | 3 | ||
| Continuous source-drain diode current (P-Ch) | IS | -2.8 | A | TC = 25 °C P-Ch | 3 | ||
| Pulsed diode forward current (N-Ch) | ISM | 20 | A | 3 | |||
| Pulsed diode forward current (P-Ch) | ISM | -25 | A | 3 | |||
| Body diode reverse recovery time (N-Ch) | trr | 60 | ns | IF = 1.7 A, di/dt = 100 A/µs, TJ = 25 °C N-Ch | 3 | ||
| Body diode reverse recovery time (P-Ch) | trr | 50 | ns | IF = -2 A, di/dt = -100 A/µs, TJ = 25 °C P-Ch | 3 | ||
| Body diode reverse recovery charge (N-Ch) | Qrr | 50 | nC | 3 | |||
| Body diode reverse recovery charge (P-Ch) | Qrr | 60 | nC | 3 | |||
| Turn-on delay time at VGEN = 10 V (N-Ch) | td(on) | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch | 3 | ||
| Turn-on delay time at VGEN = -10 V (P-Ch) | td(on) | 15 | ns | VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch | 3 | ||
| Rise time at VGEN = 10 V (N-Ch) | tr | 25 | ns | VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch | 3 | ||
| Rise time at VGEN = -10 V (P-Ch) | tr | 20 | ns | VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch | 3 | ||
| Turn-off delay time at VGEN = 10 V (N-Ch) | td(off) | 30 | ns | VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch | 3 | ||
| Turn-off delay time at VGEN = -10 V (P-Ch) | td(off) | 55 | ns | VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch | 3 | ||
| Fall time at VGEN = 10 V (N-Ch) | tf | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID 3.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch | 3 | ||
| Fall time at VGEN = -10 V (P-Ch) | tf | 45 | ns | VDD = -30 V, RL = 12.5 Ω, ID -2.4 A, VGEN = -10 V, Rg = 1 Ω P-Ch | 3 | ||
| Drain-source voltage (N-Ch) | VDS | 60 | V | 1 | |||
| Drain-source voltage (P-Ch) | VDS | -60 | V | 1 | |||
| Gate-source voltage (N-Ch) | VGS | -20 | 20 | V | 1 | ||
| Gate-source voltage (P-Ch) | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (N-Ch) | ID | 5.3 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous drain current (P-Ch) | ID | -3.9 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Pulsed drain current (N-Ch) | IDM | 20 | A | 10 µs pulse width | 1 | ||
| Pulsed drain current (P-Ch) | IDM | -25 | A | 10 µs pulse width | 1 | ||
| Maximum power dissipation (N-Ch) | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation (P-Ch) | PD | 3.4 | W | TC = 25 °C | 1 | ||
| Single pulse avalanche current (N-Ch) | IAS | 11 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche current (P-Ch) | IAS | 15 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy (N-Ch) | EAS | 6.1 | mJ | 1 | |||
| Single pulse avalanche energy (P-Ch) | EAS | 11 | mJ | 1 | |||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction-to-ambient (N-Ch) | RthJA | 55 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum junction-to-ambient (P-Ch) | RthJA | 53 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum junction-to-foot (drain) (N-Ch) | RthJF | 33 | 40 | °C/W | Steady state | 1 | |
| Maximum junction-to-foot (drain) (P-Ch) | RthJF | 30 | 37 | °C/W | Steady state | 1 | |
| Maximum junction-to-ambient, steady state (N-Ch and P-Ch) | RthJA | 110 | °C/W | Steady state (note d) | 1 |
CAD (KiCad official)
- Symbol:
SI4559ADY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4559ady-t1-ge3-etched.step/si4559ady-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4559ady-t1-ge3.step/si4559ady-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (14 pp, sha256
420507069cad3eb3, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).