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DON60N04
Public Made by Adomby adom
DOINGTER MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDON60N04
DOINGTER · MOSFETs · DFN-8(5x6)
DON60N04 from DOINGTER, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (Pin1 S1, pins 1-3 are source); VDS=40V, ID=60A, RDS(ON)<5mΩ at VGS=10V. |
| 2 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 3; continuous drain current 60A at TC=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 2; gate-source voltage limit is ±20V. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS limit ±20V, threshold 1 to 2.0V at ID=250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain, connected to the exposed drain pad); VDS=40V maximum. |
| 6 | D | passive | Drain of the N-channel MOSFET, shared with pins 5, 7 and 8; pulsed drain current 240A. |
| 7 | D | passive | Drain of the N-channel MOSFET, shared with pins 5, 6 and 8; power dissipation 48W at TC=25℃. |
| 8 | D | passive | Drain of the N-channel MOSFET, shared with pins 5-7; junction-to-case thermal resistance 2.6℃/W. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | 1 | |||
| Continuous Drain Current | ID | 42 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 24 | A | 1 | |||
| Power Dissipation | PD | 48 | W | 1 | |||
| Single pulse avalanche energy | EAS | 33.5 | mJ | Note 3: TJ=25℃, VDD=20V, VG=10V, L=0.1mH | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=40V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 4.3 | 5 | mΩ | VGS=10V,ID=20A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 6.2 | 7.5 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A | 2 | ||
| Continuous Drain Current | IS | 50 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current | ISM | 200 | A | 2 |
CAD (KiCad official)
- Symbol:
DON60N04 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
don60n04-etched.step/don60n04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);don60n04.step/don60n04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
0b4ac5189bf6b004, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).