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Contents

README

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DON60N04

DOINGTER · MOSFETs · DFN-8(5x6)

DON60N04 from DOINGTER, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (Pin1 S1, pins 1-3 are source); VDS=40V, ID=60A, RDS(ON)<5mΩ at VGS=10V.
2 S passive Source of the N-channel MOSFET, shared with pins 1 and 3; continuous drain current 60A at TC=25℃.
3 S passive Source of the N-channel MOSFET, shared with pins 1 and 2; gate-source voltage limit is ±20V.
4 G input Gate of the N-channel MOSFET; VGS limit ±20V, threshold 1 to 2.0V at ID=250μA.
5 D passive Drain of the N-channel MOSFET (pins 5-8 are drain, connected to the exposed drain pad); VDS=40V maximum.
6 D passive Drain of the N-channel MOSFET, shared with pins 5, 7 and 8; pulsed drain current 240A.
7 D passive Drain of the N-channel MOSFET, shared with pins 5, 6 and 8; power dissipation 48W at TC=25℃.
8 D passive Drain of the N-channel MOSFET, shared with pins 5-7; junction-to-case thermal resistance 2.6℃/W.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer DOINGTER
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 60 A 1
Continuous Drain Current ID 42 A TC=100℃ 1
Pulsed Drain Current IDM 24 A 1
Power Dissipation PD 48 W 1
Single pulse avalanche energy EAS 33.5 mJ Note 3: TJ=25℃, VDD=20V, VG=10V, L=0.1mH 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RθJC 2.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=40V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1 1.5 2 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 4.3 5 mΩ VGS=10V,ID=20A 2
Drain-Source On Resistance RDS(ON) 6.2 7.5 mΩ VGS=4.5V,ID=10A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=20A 2
Continuous Drain Current IS 50 A VD=VG=0V 2
Pulsed Drain Current ISM 200 A 2

CAD (KiCad official)

  • Symbol: DON60N04
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: don60n04-etched.step / don60n04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); don60n04.step / don60n04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 0b4ac5189bf6b004, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF