component
BSS159N H6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS159N H6327
Infineon Technologies · MOSFETs · SOT-23-3
BSS159N H6327 from Infineon Technologies, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel depletion-mode MOSFET; gate-source voltage is rated at ±20 V and the gate threshold is -3.5 V to -2.4 V (VDS=3 V, ID=26 µA). |
| 2 | S | passive | Source of the MOSFET, connected to the body diode anode in the symbol; continuous drain current is 0.23 A at TA=25 °C. |
| 3 | D | passive | Drain of the MOSFET, rated at 60 V drain-source breakdown (VGS=-10 V, ID=250 µA) with a pulsed drain current of 0.92 A at TA=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, TA=25 °C | ID | 0.23 | A | TA=25 °C | 1 | ||
| Continuous drain current, TA=70 °C | ID | 0.18 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | 0.92 | A | TA=25 °C | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=0.23 A, VDS=60 V, di/dt=200 A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.36 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction to ambient | RthJA | 350 | K/W | minimal footprint | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS=-10 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | -3.5 | -2.8 | -2.4 | V | VDS=3 V, ID=26 µA | 2 |
| Drain-source cutoff current, Tj=25 °C | ID(off) | 0.1 | µA | VDS=60 V, VGS=-10 V, Tj=25 °C | 2 | ||
| Drain-source cutoff current, Tj=125 °C | ID(off) | 10 | µA | VDS=60 V, VGS=-10 V, Tj=125 °C | 2 | ||
| Gate-source leakage current | IGSS | 10 | nA | VGS=20 V, VDS=0 V | 2 | ||
| On-state drain current | IDSS | 130 | mA | VGS=0 V, VDS=10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 3.9 | 8 | Ω | VGS=0 V, ID=0.07 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 1.7 | 3.5 | Ω | VGS=10 V, ID=0.16 A | 2 | |
| Transconductance | gfs | 0.1 | 0.19 | S | /VDS/>2/ID/RDS(on)max, ID=0.16 A | 2 | |
| Input capacitance | Ciss | 29 | 39 | pF | VGS=-3 V, VDS=25 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 7.4 | 10 | pF | VGS=-3 V, VDS=25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 3.1 | 5 | pF | VGS=-3 V, VDS=25 V, f=1 MHz | 3 | |
| Turn-on delay time | td(on) | 3.1 | 4.7 | ns | VDD=25 V, VGS=-3…7 V, ID=0.16 A, RG=6 Ω | 3 | |
| Rise time | tr | 2.9 | 4.4 | ns | VDD=25 V, VGS=-3…7 V, ID=0.16 A, RG=6 Ω | 3 | |
| Turn-off delay time | td(off) | 9 | 13 | ns | VDD=25 V, VGS=-3…7 V, ID=0.16 A, RG=6 Ω | 3 | |
| Fall time | tf | 9 | 13 | ns | VDD=25 V, VGS=-3…7 V, ID=0.16 A, RG=6 Ω | 3 | |
| Diode continuous forward current | IS | 0.2 | A | 3 | |||
| Diode pulse current | IS,pulse | 0.91 | A | 3 | |||
| Diode forward voltage | VSD | 0.81 | 1.2 | V | VGS=-3 V, IF=0.16 A, Tj=25 °C | 3 | |
| Reverse recovery time | trr | 10.4 | 13 | ns | VR=30 V, IF=0.16 A, diF/dt=100 A/µs, TA=25 °C | 3 | |
| Reverse recovery charge | Qrr | 3.3 | 4.1 | nC | VR=30 V, IF=0.16 A, diF/dt=100 A/µs, TA=25 °C | 3 | |
| Gate to source charge | Qgs | 0.22 | nC | VDD=48 V, ID=0.16 A, VGS=-3 to 5 V | 3 | ||
| Gate to drain charge | Qgd | 0.42 | nC | VDD=48 V, ID=0.16 A, VGS=-3 to 5 V | 3 | ||
| Gate charge total | Qg | 1.4 | nC | VDD=48 V, ID=0.16 A, VGS=-3 to 5 V | 3 | ||
| Gate plateau voltage | Vplateau | -0.8 | V | VDD=48 V, ID=0.16 A, VGS=-3 to 5 V | 3 |
CAD (KiCad official)
- Symbol:
BSS159N H6327 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
bss159n-h6327-etched.step/bss159n-h6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss159n-h6327.step/bss159n-h6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
7c2c835629494dcf, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).