component

BSS159N H6327

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbss159n h6327factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers bss159n-h6327: viewers · Ray 8d ago
bss159n-h6327-etched.glb Publish 0.1.0 · Ray 8d ago
bss159n-h6327-etched.step bss159n-h6327: factory component page (tier=lcsc) · Ray 8d ago
bss159n-h6327-hero.glb bss159n-h6327: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
bss159n-h6327-hero.overlay.json Publish 0.1.0 · Ray 8d ago
bss159n-h6327.glb Publish 0.1.0 · Ray 8d ago
bss159n-h6327.kicad_mod Publish 0.1.0 · Ray 8d ago
bss159n-h6327.kicad_sym Publish 0.1.0 · Ray 8d ago
bss159n-h6327.lbr Publish 0.1.0 · Ray 8d ago
bss159n-h6327.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago

BSS159N H6327

Infineon Technologies · MOSFETs · SOT-23-3

BSS159N H6327 from Infineon Technologies, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel depletion-mode MOSFET; gate-source voltage is rated at ±20 V and the gate threshold is -3.5 V to -2.4 V (VDS=3 V, ID=26 µA).
2 S passive Source of the MOSFET, connected to the body diode anode in the symbol; continuous drain current is 0.23 A at TA=25 °C.
3 D passive Drain of the MOSFET, rated at 60 V drain-source breakdown (VGS=-10 V, ID=250 µA) with a pulsed drain current of 0.92 A at TA=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, TA=25 °C ID 0.23 A TA=25 °C 1
Continuous drain current, TA=70 °C ID 0.18 A TA=70 °C 1
Pulsed drain current ID,pulse 0.92 A TA=25 °C 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=0.23 A, VDS=60 V, di/dt=200 A/µs, Tj,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 0.36 W TA=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction to ambient RthJA 350 K/W minimal footprint 2
Drain-source breakdown voltage V(BR)DSS 60 V VGS=-10 V, ID=250 µA 2
Gate threshold voltage VGS(th) -3.5 -2.8 -2.4 V VDS=3 V, ID=26 µA 2
Drain-source cutoff current, Tj=25 °C ID(off) 0.1 µA VDS=60 V, VGS=-10 V, Tj=25 °C 2
Drain-source cutoff current, Tj=125 °C ID(off) 10 µA VDS=60 V, VGS=-10 V, Tj=125 °C 2
Gate-source leakage current IGSS 10 nA VGS=20 V, VDS=0 V 2
On-state drain current IDSS 130 mA VGS=0 V, VDS=10 V 2
Drain-source on-state resistance RDS(on) 3.9 8 Ω VGS=0 V, ID=0.07 A 2
Drain-source on-state resistance RDS(on) 1.7 3.5 Ω VGS=10 V, ID=0.16 A 2
Transconductance gfs 0.1 0.19 S /VDS/>2/ID/RDS(on)max, ID=0.16 A 2
Input capacitance Ciss 29 39 pF VGS=-3 V, VDS=25 V, f=1 MHz 3
Output capacitance Coss 7.4 10 pF VGS=-3 V, VDS=25 V, f=1 MHz 3
Reverse transfer capacitance Crss 3.1 5 pF VGS=-3 V, VDS=25 V, f=1 MHz 3
Turn-on delay time td(on) 3.1 4.7 ns VDD=25 V, VGS=-3…7 V, ID=0.16 A, RG=6 Ω 3
Rise time tr 2.9 4.4 ns VDD=25 V, VGS=-3…7 V, ID=0.16 A, RG=6 Ω 3
Turn-off delay time td(off) 9 13 ns VDD=25 V, VGS=-3…7 V, ID=0.16 A, RG=6 Ω 3
Fall time tf 9 13 ns VDD=25 V, VGS=-3…7 V, ID=0.16 A, RG=6 Ω 3
Diode continuous forward current IS 0.2 A 3
Diode pulse current IS,pulse 0.91 A 3
Diode forward voltage VSD 0.81 1.2 V VGS=-3 V, IF=0.16 A, Tj=25 °C 3
Reverse recovery time trr 10.4 13 ns VR=30 V, IF=0.16 A, diF/dt=100 A/µs, TA=25 °C 3
Reverse recovery charge Qrr 3.3 4.1 nC VR=30 V, IF=0.16 A, diF/dt=100 A/µs, TA=25 °C 3
Gate to source charge Qgs 0.22 nC VDD=48 V, ID=0.16 A, VGS=-3 to 5 V 3
Gate to drain charge Qgd 0.42 nC VDD=48 V, ID=0.16 A, VGS=-3 to 5 V 3
Gate charge total Qg 1.4 nC VDD=48 V, ID=0.16 A, VGS=-3 to 5 V 3
Gate plateau voltage Vplateau -0.8 V VDD=48 V, ID=0.16 A, VGS=-3 to 5 V 3

CAD (KiCad official)

  • Symbol: BSS159N H6327
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: bss159n-h6327-etched.step / bss159n-h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss159n-h6327.step / bss159n-h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 7c2c835629494dcf, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF