component
SE0108A
Public Made by Adomby adom
SINO IC MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSE0108A
SINO IC · MOSFETs · SOT-89
SE0108A from SINO IC, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel enhancement-mode MOSFET; gate-source voltage is rated ±20 V (VGS limit) and gate threshold VGS(th) is 1 to 2 V at VDS=VGS, ID=250µA. |
| 2 | DRAIN | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V (VDS) and continuous drain current is 8 A, with the package providing good heat dissipation. |
| 3 | SOURCE | passive | Source terminal of the MOSFET, serving as the reference for gate drive; the diode forward voltage is specified as 1.2 V max at IS=3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Pulsed | IDM | 18 | A | Repetitive rating: pulse width limited by maximum junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 82 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | 110 | V | VGS=0V, ID=250µA | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 500 | nA | VDS=80V, VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -90 | 90 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS, ID=250µ | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 115 | 125 | Ω | VGS=10V, ID=5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 135 | 145 | Ω | VGS=4.5V, ID=5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=3A | 2 |
CAD (KiCad official)
- Symbol:
SE0108A - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
se0108a-etched.step/se0108a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se0108a.step/se0108a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (5 pp, sha256
744143e5ca8ef92e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).