component

SE0108A

Public Made by Adom

by adom

SINO IC MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 4h ago
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package.json Publish 0.1.0 · Ray 4h ago
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README.md Publish 0.1.0 · Ray 4h ago
se0108a-etched.glb Publish 0.1.0 · Ray 4h ago
se0108a-etched.step se0108a: factory component page (tier=lcsc) · Ray 4h ago
se0108a-hero.glb se0108a: hero GLB from the etched model (keeps the MPN mark) · Ray 4h ago
se0108a-hero.overlay.json Publish 0.1.0 · Ray 4h ago
se0108a.glb Publish 0.1.0 · Ray 4h ago
se0108a.kicad_mod Publish 0.1.0 · Ray 4h ago
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se0108a.step Publish 0.1.0 · Ray 4h ago

SE0108A

SINO IC · MOSFETs · SOT-89

SE0108A from SINO IC, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel enhancement-mode MOSFET; gate-source voltage is rated ±20 V (VGS limit) and gate threshold VGS(th) is 1 to 2 V at VDS=VGS, ID=250µA.
2 DRAIN passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V (VDS) and continuous drain current is 8 A, with the package providing good heat dissipation.
3 SOURCE passive Source terminal of the MOSFET, serving as the reference for gate drive; the diode forward voltage is specified as 1.2 V max at IS=3 A.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Pulsed IDM 18 A Repetitive rating: pulse width limited by maximum junction temperature (Note 1) 1
Maximum Power Dissipation PD 1.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 82 ℃/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Drain-Source Breakdown Voltage BVDSS 100 110 V VGS=0V, ID=250µA 1
Zero Gate Voltage Drain Current IDSS 500 nA VDS=80V, VGS=0V 1
Gate-Body Leakage Current IGSS -90 90 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2 V VDS=VGS, ID=250µ 2
Drain-Source On-State Resistance RDS(ON) 115 125 Ω VGS=10V, ID=5A 2
Drain-Source On-State Resistance RDS(ON) 135 145 Ω VGS=4.5V, ID=5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=3A 2

CAD (KiCad official)

  • Symbol: SE0108A
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: se0108a-etched.step / se0108a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se0108a.step / se0108a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (5 pp, sha256 744143e5ca8ef92e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF