component
UTT25P10L-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownUTT25P10L-VB
VBsemi Elec · MOSFETs · TO-220AB
UTT25P10L-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V (VGS). |
| 2 | D | passive | Drain terminal; rated -100 V drain-source (VDS) with continuous drain current of 18 A at TC = 25 °C (limit as printed, sign not shown in the extracted text), and also the drain/tab for the TO-220AB case. |
| 3 | S | passive | Source terminal; continuous body-diode (source) current rating is -18 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | TC = 25 °C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -18 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -13 | A | TC = 70 °C, TJ = 150 °C | 1 | ||
| Pulsed Drain Current | IDM | -100 | A | t = 300 µs | 1 | ||
| Avalanche Current | IAS | -10 | A | 1 | |||
| Single Avalanche Energy | EAS | 31 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 11.7 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.1 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 60 | °C/W | PCB mount (1 in square PCB, FR-4) | 1 | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 9 | °C/W | Junction-to-Case (Drain) | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -100 | V | VDS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -250 | 250 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = -100 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | µA | VDS = -100 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | -18 | A | VDS = -10 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 167 | mΩ | VGS = -10 V, ID = -14 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 178 | mΩ | VGS = -4.5 V, ID = -12 A | 2 | ||
| Total Gate Charge | Qg | 67 | 100 | nC | VDS = -20 V, VGS = -10 V, ID = -14 A | 2 | |
| Gate Resistance | Rg | 0.5 | 2.5 | 5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 | |
| Rise Time | tr | 11 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 42 | 63 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 | |
| Fall Time | tf | 12 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 | |
| Continuous Current (body diode) | IS | -18 | A | TC = 25 °C | 2 | ||
| Pulsed Current (body diode) | ISM | -100 | A | 2 | |||
| Forward Voltage | VSD | -0.8 | -1.5 | V | IF = -10 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 38 | 57 | ns | IF = -10 A, dI/dt = 100 A/µs | 2 | |
| Peak Reverse Recovery Current | IRM(REC) | 2.3 | 3.5 | A | IF = -10 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 40 | 60 | nC | IF = -10 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
UTT25P10L-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
utt25p10l-vb-etched.step/utt25p10l-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);utt25p10l-vb.step/utt25p10l-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
51587998030b57c6, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).