component

UTT25P10L-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsutt25p10l-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5h ago
viewers utt25p10l-vb: viewers · Ray 5h ago
package.json Publish 0.1.0 · Ray 5h ago
page.json Set visibility: public · Ray 5h ago
README.md Publish 0.1.0 · Ray 5h ago
utt25p10l-vb-etched.glb Publish 0.1.0 · Ray 5h ago
utt25p10l-vb-etched.step utt25p10l-vb: factory component page (tier=lcsc) · Ray 5h ago
utt25p10l-vb-hero.glb utt25p10l-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 5h ago
utt25p10l-vb-hero.overlay.json Publish 0.1.0 · Ray 5h ago
utt25p10l-vb.glb Publish 0.1.0 · Ray 5h ago
utt25p10l-vb.kicad_mod Publish 0.1.0 · Ray 5h ago
utt25p10l-vb.kicad_sym Publish 0.1.0 · Ray 5h ago
utt25p10l-vb.lbr Publish 0.1.0 · Ray 5h ago
utt25p10l-vb.step Publish 0.1.0 · Ray 5h ago

UTT25P10L-VB

VBsemi Elec · MOSFETs · TO-220AB

UTT25P10L-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±20 V (VGS).
2 D passive Drain terminal; rated -100 V drain-source (VDS) with continuous drain current of 18 A at TC = 25 °C (limit as printed, sign not shown in the extracted text), and also the drain/tab for the TO-220AB case.
3 S passive Source terminal; continuous body-diode (source) current rating is -18 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V TC = 25 °C unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -18 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -13 A TC = 70 °C, TJ = 150 °C 1
Pulsed Drain Current IDM -100 A t = 300 µs 1
Avalanche Current IAS -10 A 1
Single Avalanche Energy EAS 31 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 11.7 W TC = 25 °C 1
Maximum Power Dissipation PD 1.1 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 60 °C/W PCB mount (1 in square PCB, FR-4) 1
Junction-to-Case (Drain) Thermal Resistance RthJC 9 °C/W Junction-to-Case (Drain) 1
Drain-Source Breakdown Voltage VDS -100 V VDS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = -100 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -18 A VDS = -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 167 mΩ VGS = -10 V, ID = -14 A 2
Drain-Source On-State Resistance RDS(on) 178 mΩ VGS = -4.5 V, ID = -12 A 2
Total Gate Charge Qg 67 100 nC VDS = -20 V, VGS = -10 V, ID = -14 A 2
Gate Resistance Rg 0.5 2.5 5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 10 20 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 2
Rise Time tr 11 20 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 2
Turn-Off Delay Time td(off) 42 63 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 2
Fall Time tf 12 20 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 2
Continuous Current (body diode) IS -18 A TC = 25 °C 2
Pulsed Current (body diode) ISM -100 A 2
Forward Voltage VSD -0.8 -1.5 V IF = -10 A, VGS = 0 V 2
Reverse Recovery Time trr 38 57 ns IF = -10 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.3 3.5 A IF = -10 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 40 60 nC IF = -10 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: UTT25P10L-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: utt25p10l-vb-etched.step / utt25p10l-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); utt25p10l-vb.step / utt25p10l-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 51587998030b57c6, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF