component
IPP17N25S3100AKSA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPP17N25S3100AKSA1
Infineon Technologies · MOSFETs · TO-220-3
IPP17N25S3100AKSA1 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin 1 of the N-channel enhancement-mode MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of 2.0 to 4.0 V at ID=54 µA. |
| 2 | D | passive | Drain pin 2, rated for VDS 250 V and 17 A continuous drain current at TC=25 °C (68 A pulsed), and connected to the tab. |
| 3 | S | passive | Source pin 3 of the N-channel MOSFET, carrying the 17 A continuous drain current and the body-diode current (IS max 17 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 17 | A | TC=25 °C, VGS=10 V | 1 | ||
| Continuous drain current | ID | 13.3 | A | TC=100°C, VGS=10V | 1 | ||
| Pulsed drain current | ID,pulse | 68 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 54 | mJ | ID=5.4A | 1 | ||
| Avalanche current, single pulse | IAS | 5.4 | A | 1 | |||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 107 | W | TC=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction - case | RthJC | 1.4 | K/W | 2 | |||
| Thermal resistance, junction - ambient, leaded | RthJA | 62 | K/W | 2 | |||
| Drain-source breakdown voltage | V(BR)DSS | 250 | V | VGS=0V, ID=1mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=54µA | 2 |
| Zero gate voltage drain current | IDSS | 0.01 | 1 | µA | VDS=250V, VGS=0V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | 100 | µA | VDS=250V, VGS=0V, Tj=125°C | 2 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20V, VDS=0V | 2 | |
| Drain-source on-state resistance | RDS(on) | 85 | 100 | mΩ | VGS=10V, ID=17A | 2 | |
| Input capacitance | Ciss | 1133 | 1500 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Output capacitance | Coss | 480 | 625 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 11 | 23 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Gate to source charge | Qgs | 5 | 7 | nC | VDD=200V, ID=17A, VGS=0 to 10V | 3 | |
| Gate to drain charge | Qgd | 2.4 | 4.8 | nC | VDD=200V, ID=17A, VGS=0 to 10V | 3 | |
| Gate charge total | Qg | 14 | 19 | nC | VDD=200V, ID=17A, VGS=0 to 10V | 3 | |
| Diode continous forward current | IS | 17 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 56 | A | TC=25°C | 3 | ||
| Diode forward voltage | VSD | 0.9 | 1.3 | V | VGS=0V, IF=17A, Tj=25°C | 3 | |
| Thermal resistance, junction - ambient, SMD, 6 cm2 cooling area | RthJA | 40 | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 | ||
| Turn-on delay time | td(on) | 4.4 | ns | VDD=125V, VGS=10V, ID=17A, RG=3.3Ω | 3 | ||
| Rise time | tr | 3.7 | ns | VDD=125V, VGS=10V, ID=17A, RG=3.3Ω | 3 | ||
| Turn-off delay time | td(off) | 7.5 | ns | VDD=125V, VGS=10V, ID=17A, RG=3.3Ω | 3 | ||
| Fall time | tf | 1.2 | ns | VDD=125V, VGS=10V, ID=17A, RG=3.3Ω | 3 | ||
| Gate plateau voltage | Vplateau | 4.6 | V | VDD=200V, ID=17A, VGS=0 to 10V | 3 | ||
| Reverse recovery time | trr | 120 | ns | VR=125V, IF=17A, diF/dt=100A/µs | 3 | ||
| Reverse recovery charge | Qrr | 525 | nC | VR=125V, IF=17A, diF/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
IPP17N25S3100AKSA1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ipp17n25s3100aksa1-etched.step/ipp17n25s3100aksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp17n25s3100aksa1.step/ipp17n25s3100aksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
a247a312c98e5a3f, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).