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IPP17N25S3100AKSA1

Infineon Technologies · MOSFETs · TO-220-3

IPP17N25S3100AKSA1 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin 1 of the N-channel enhancement-mode MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of 2.0 to 4.0 V at ID=54 µA.
2 D passive Drain pin 2, rated for VDS 250 V and 17 A continuous drain current at TC=25 °C (68 A pulsed), and connected to the tab.
3 S passive Source pin 3 of the N-channel MOSFET, carrying the 17 A continuous drain current and the body-diode current (IS max 17 A).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 17 A TC=25 °C, VGS=10 V 1
Continuous drain current ID 13.3 A TC=100°C, VGS=10V 1
Pulsed drain current ID,pulse 68 A TC=25°C 1
Avalanche energy, single pulse EAS 54 mJ ID=5.4A 1
Avalanche current, single pulse IAS 5.4 A 1
Reverse diode dv/dt dv/dt 6 kV/µs 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 107 W TC=25°C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - case RthJC 1.4 K/W 2
Thermal resistance, junction - ambient, leaded RthJA 62 K/W 2
Drain-source breakdown voltage V(BR)DSS 250 V VGS=0V, ID=1mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=54µA 2
Zero gate voltage drain current IDSS 0.01 1 µA VDS=250V, VGS=0V 2
Zero gate voltage drain current IDSS 1 100 µA VDS=250V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS 10 100 nA VGS=20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 85 100 mΩ VGS=10V, ID=17A 2
Input capacitance Ciss 1133 1500 pF VGS=0V, VDS=25V, f=1MHz 3
Output capacitance Coss 480 625 pF VGS=0V, VDS=25V, f=1MHz 3
Reverse transfer capacitance Crss 11 23 pF VGS=0V, VDS=25V, f=1MHz 3
Gate to source charge Qgs 5 7 nC VDD=200V, ID=17A, VGS=0 to 10V 3
Gate to drain charge Qgd 2.4 4.8 nC VDD=200V, ID=17A, VGS=0 to 10V 3
Gate charge total Qg 14 19 nC VDD=200V, ID=17A, VGS=0 to 10V 3
Diode continous forward current IS 17 A TC=25°C 3
Diode pulse current IS,pulse 56 A TC=25°C 3
Diode forward voltage VSD 0.9 1.3 V VGS=0V, IF=17A, Tj=25°C 3
Thermal resistance, junction - ambient, SMD, 6 cm2 cooling area RthJA 40 K/W SMD version, device on PCB, 6 cm2 cooling area 2
Turn-on delay time td(on) 4.4 ns VDD=125V, VGS=10V, ID=17A, RG=3.3Ω 3
Rise time tr 3.7 ns VDD=125V, VGS=10V, ID=17A, RG=3.3Ω 3
Turn-off delay time td(off) 7.5 ns VDD=125V, VGS=10V, ID=17A, RG=3.3Ω 3
Fall time tf 1.2 ns VDD=125V, VGS=10V, ID=17A, RG=3.3Ω 3
Gate plateau voltage Vplateau 4.6 V VDD=200V, ID=17A, VGS=0 to 10V 3
Reverse recovery time trr 120 ns VR=125V, IF=17A, diF/dt=100A/µs 3
Reverse recovery charge Qrr 525 nC VR=125V, IF=17A, diF/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: IPP17N25S3100AKSA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp17n25s3100aksa1-etched.step / ipp17n25s3100aksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp17n25s3100aksa1.step / ipp17n25s3100aksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 a247a312c98e5a3f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF