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NCE3007S
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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE3007S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE3007S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, shorted to pins 2 and 3; VDS rating is -30V and continuous ID is -6.5A. |
| 2 | S | passive | Source of the P-channel MOSFET, shorted to pins 1 and 3; VDS rating is -30V and continuous ID is -6.5A. |
| 3 | S | passive | Source of the P-channel MOSFET, shorted to pins 1 and 2; VDS rating is -30V and continuous ID is -6.5A. |
| 4 | G | input | Gate of the P-channel MOSFET; absolute maximum VGS is ±20V and threshold VGS(th) is -1.5V min to -2.5V max. |
| 5 | D | passive | Drain of the P-channel MOSFET, shorted to pins 6, 7 and 8; VDS -30V, pulsed IDM -30A. |
| 6 | D | passive | Drain of the P-channel MOSFET, shorted to pins 5, 7 and 8; VDS -30V, pulsed IDM -30A. |
| 7 | D | passive | Drain of the P-channel MOSFET, shorted to pins 5, 6 and 8; VDS -30V, pulsed IDM -30A. |
| 8 | D | passive | Drain of the P-channel MOSFET, shorted to pins 5, 6 and 7; VDS -30V, pulsed IDM -30A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -6.5 | A | 1 | |||
| Drain Current-Continuous (TC=100C) | ID (100℃) | -4.5 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Maximum Power Dissipation | PD | 3.1 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 40 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | -33 | V | VGS=0V ID=-250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.5 | -1.9 | -2.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 30 | 42 | mΩ | VGS=-10V, ID=-6.5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 53 | 72 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Forward Transconductance | gFS | 14 | S | VDS=-5V,ID=-6.5A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-6.5A | 2 | ||
| Diode Forward Current | IS | -6.5 | A | 2 | |||
| Input Capacitance | Clss | 520 | pF | 2 | |||
| Output Capacitance | Coss | 100 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 65 | pF | VDS=-15V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 7.5 | nS | 2 | |||
| Turn-on Rise Time | tr | 5.5 | nS | 2 | |||
| Turn-Off Delay Time | td(off) | 19 | nS | 2 | |||
| Turn-Off Fall Time | tf | 7 | nS | VDD=-15V,ID=-4A VGS=-10V,RGEN=3Ω | 2 | ||
| Total Gate Charge | Qg | 9.2 | nC | 2 | |||
| Gate-Source Charge | Qgs | 1.6 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 2.2 | nC | VDS=-15V,ID=-6.5A, VGS=-10V | 2 |
CAD (KiCad official)
- Symbol:
NCE3007S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce3007s-etched.step/nce3007s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3007s.step/nce3007s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
2e72161eaac26d3a, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).