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NCE3007S

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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE3007S

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE3007S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, shorted to pins 2 and 3; VDS rating is -30V and continuous ID is -6.5A.
2 S passive Source of the P-channel MOSFET, shorted to pins 1 and 3; VDS rating is -30V and continuous ID is -6.5A.
3 S passive Source of the P-channel MOSFET, shorted to pins 1 and 2; VDS rating is -30V and continuous ID is -6.5A.
4 G input Gate of the P-channel MOSFET; absolute maximum VGS is ±20V and threshold VGS(th) is -1.5V min to -2.5V max.
5 D passive Drain of the P-channel MOSFET, shorted to pins 6, 7 and 8; VDS -30V, pulsed IDM -30A.
6 D passive Drain of the P-channel MOSFET, shorted to pins 5, 7 and 8; VDS -30V, pulsed IDM -30A.
7 D passive Drain of the P-channel MOSFET, shorted to pins 5, 6 and 8; VDS -30V, pulsed IDM -30A.
8 D passive Drain of the P-channel MOSFET, shorted to pins 5, 6 and 7; VDS -30V, pulsed IDM -30A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -6.5 A 1
Drain Current-Continuous (TC=100C) ID (100℃) -4.5 A TC=100℃ 1
Pulsed Drain Current IDM -30 A 1
Maximum Power Dissipation PD 3.1 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 40 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 2
Drain-Source Breakdown Voltage BVDSS -30 -33 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.5 -1.9 -2.5 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 30 42 mΩ VGS=-10V, ID=-6.5A 2
Drain-Source On-State Resistance RDS(ON) 53 72 mΩ VGS=-4.5V, ID=-5A 2
Forward Transconductance gFS 14 S VDS=-5V,ID=-6.5A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-6.5A 2
Diode Forward Current IS -6.5 A 2
Input Capacitance Clss 520 pF 2
Output Capacitance Coss 100 pF 2
Reverse Transfer Capacitance Crss 65 pF VDS=-15V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 7.5 nS 2
Turn-on Rise Time tr 5.5 nS 2
Turn-Off Delay Time td(off) 19 nS 2
Turn-Off Fall Time tf 7 nS VDD=-15V,ID=-4A VGS=-10V,RGEN=3Ω 2
Total Gate Charge Qg 9.2 nC 2
Gate-Source Charge Qgs 1.6 nC 2
Gate-Drain Charge Qgd 2.2 nC VDS=-15V,ID=-6.5A, VGS=-10V 2

CAD (KiCad official)

  • Symbol: NCE3007S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce3007s-etched.step / nce3007s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce3007s.step / nce3007s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 2e72161eaac26d3a, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF