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S-LMBT4403WT1G

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LRC Bipolar (BJT), SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorss-lmbt4403wt1gfactory-2.0.0extractor-text

Verified S-LMBT4403WT1G

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: S-LMBT4403WT1G · SC-70 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-323_SC-70
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-3dsvv651/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ s-lmbt4403wt1g.kicad_sym✓ s-lmbt4403wt1g.kicad_mod✓ s-lmbt4403wt1g.step
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Symbol & Footprint

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Contents

README

markdown

S-LMBT4403WT1G

LRC · Bipolar (BJT) · SC-70

S-LMBT4403WT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP silicon general-purpose transistor; the emitter-base breakdown voltage V(BR)EBO is -5.0 Vdc minimum at IE = -0.1 mAdc.
2 EMITTER passive Emitter terminal of the PNP silicon general-purpose transistor; the emitter-base voltage rating VEBO is 5.0 Vdc.
3 COLLECTOR passive Collector terminal of the PNP silicon general-purpose transistor; the datasheet limits are VCEO -40 Vdc and continuous collector current IC -600 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SC-70
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -40 Vdc IC = -1.0 mAdc, IB = 0 1
Collector-Base Breakdown Voltage V(BR)CBO -40 Vdc IC = -0.1 mAdc, IE = 0 1
Emitter-Base Breakdown Voltage V(BR)EBO -5 Vdc IE = -0.1 mAdc, IC = 0 1
Base Cutoff Current IBEV -0.1 µAdc VCE = -35 Vdc, VEB = -0.4 Vdc 1
Collector Cutoff Current ICEX -0.1 µAdc VCE = -35 Vdc, VEB = -0.4 Vdc 1
DC Current Gain hFE 30 IC = -0.1 mAdc, VCE = -1.0 Vdc 2
DC Current Gain hFE 60 IC = -1.0 mAdc, VCE = -1.0 Vdc 2
DC Current Gain hFE 100 IC = -10 mAdc, VCE = -1.0 Vdc 2
DC Current Gain hFE 100 300 IC = -150 mAdc, VCE = -2.0 Vdc 2
DC Current Gain hFE 20 IC = -500 mAdc, VCE = -2.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.4 Vdc IC = -150 mAdc, IB = -15 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.75 Vdc IC = -500 mAdc, IB = -50 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -0.75 -0.95 Vdc IC = -150 mAdc, IB = -15 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -1.3 Vdc IC = -500 mAdc, IB = -50 mAdc 2
Current-Gain Bandwidth Product fT 200 MHz IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz 2
Collector-Base Capacitance Ccb 8.5 pF VCB = -10 Vdc, IE = 0, f = 1.0 MHz 2
Emitter-Base Capacitance Ceb 30 pF VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz 2
Input Impedance hie 1.5 15 kΩ VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 0.1 8 X 10 -4 VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz 2
Small-Signal Current Gain hfe 60 500 VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz 2
Output Admittance hoe 1 100 µmhos VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz 2
Delay Time td 15 ns VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc 2
Rise Time tr 20 ns VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc 2
Storage Time ts 225 ns VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc 2
Fall Time tf 30 ns VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc 2
Collector-Emitter Voltage VCEO -40 Vdc 1
Collector-Base Voltage VCBO -40 Vdc 1
Emitter-Base Voltage VEBO -5 Vdc 1
Collector Current, Continuous IC -600 mAdc 1
Total Device Dissipation FR−5 Board PD 150 mW TA = 25°C 1
Thermal Resistance, Junction−to−Ambient RJA 833 °C/W 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: S-LMBT4403WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70 (KiCad packages3D, STEP)
  • 3D model files: s-lmbt4403wt1g-etched.step / s-lmbt4403wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lmbt4403wt1g.step / s-lmbt4403wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 1aa2d471f6c4f8ec, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF