component
S-LMBT4403WT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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S-LMBT4403WT1G
LRC · Bipolar (BJT) · SC-70
S-LMBT4403WT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP silicon general-purpose transistor; the emitter-base breakdown voltage V(BR)EBO is -5.0 Vdc minimum at IE = -0.1 mAdc. |
| 2 | EMITTER | passive | Emitter terminal of the PNP silicon general-purpose transistor; the emitter-base voltage rating VEBO is 5.0 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP silicon general-purpose transistor; the datasheet limits are VCEO -40 Vdc and continuous collector current IC -600 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | Vdc | IC = -1.0 mAdc, IB = 0 | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | Vdc | IC = -0.1 mAdc, IE = 0 | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = -0.1 mAdc, IC = 0 | 1 | ||
| Base Cutoff Current | IBEV | -0.1 | µAdc | VCE = -35 Vdc, VEB = -0.4 Vdc | 1 | ||
| Collector Cutoff Current | ICEX | -0.1 | µAdc | VCE = -35 Vdc, VEB = -0.4 Vdc | 1 | ||
| DC Current Gain | hFE | 30 | IC = -0.1 mAdc, VCE = -1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 60 | IC = -1.0 mAdc, VCE = -1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 100 | IC = -10 mAdc, VCE = -1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 100 | 300 | IC = -150 mAdc, VCE = -2.0 Vdc | 2 | ||
| DC Current Gain | hFE | 20 | IC = -500 mAdc, VCE = -2.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | Vdc | IC = -150 mAdc, IB = -15 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.75 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.75 | -0.95 | Vdc | IC = -150 mAdc, IB = -15 mAdc | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.3 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 2 | ||
| Current-Gain Bandwidth Product | fT | 200 | MHz | IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz | 2 | ||
| Collector-Base Capacitance | Ccb | 8.5 | pF | VCB = -10 Vdc, IE = 0, f = 1.0 MHz | 2 | ||
| Emitter-Base Capacitance | Ceb | 30 | pF | VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz | 2 | ||
| Input Impedance | hie | 1.5 | 15 | kΩ | VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz | 2 | |
| Voltage Feedback Ratio | hre | 0.1 | 8 | X 10 -4 | VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz | 2 | |
| Small-Signal Current Gain | hfe | 60 | 500 | VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz | 2 | ||
| Output Admittance | hoe | 1 | 100 | µmhos | VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz | 2 | |
| Delay Time | td | 15 | ns | VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 2 | ||
| Rise Time | tr | 20 | ns | VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 2 | ||
| Storage Time | ts | 225 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc | 2 | ||
| Fall Time | tf | 30 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc | 2 | ||
| Collector-Emitter Voltage | VCEO | -40 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | -40 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current, Continuous | IC | -600 | mAdc | 1 | |||
| Total Device Dissipation FR−5 Board | PD | 150 | mW | TA = 25°C | 1 | ||
| Thermal Resistance, Junction−to−Ambient | RJA | 833 | °C/W | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
S-LMBT4403WT1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files:
s-lmbt4403wt1g-etched.step/s-lmbt4403wt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-lmbt4403wt1g.step/s-lmbt4403wt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
1aa2d471f6c4f8ec, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).