component
IRLML0030TR
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRLML0030TR
UMW · MOSFETs · SOT-23
IRLML0030TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the MOSFET, with a gate-to-source voltage rating of ±20 V (VGS) per the maximum ratings table. |
| 2 | S | passive | SOURCE terminal of the MOSFET; the datasheet rates the continuous body-diode source current IS at 1.6 A and the pulsed source current ISM at 21 A. |
| 3 | D | passive | DRAIN terminal of the MOSFET, with a drain-source voltage VDS of 30 V and a continuous drain current ID of 5.3 A at TA=25°C with VGS @ 10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.7 | 2.3 | V | VDS=VGS, ID=25µA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | 33 | 40 | mΩ | VGS=4.5V, ID=4.2A | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 22 | 27 | mΩ | VGS=10V, ID=5.2A | 3 | |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.02 | V/°C | ID=1mA, reference to 25°C | 3 | ||
| Forward Transconductance | gfs | 9.5 | S | VDS=10V, ID=5.2A | 3 | ||
| Input Capacitance | Ciss | 382 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 84 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 39 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | ||
| Drain-Source Voltage | VDS | 30 | V | TA=25°C unless otherwise noted | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 5.3 | A | TA=25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 4.3 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 21 | A | Pulse width ≤ 400µs; duty cycle ≤ 2% | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Linear Derating Factor | PD | 0.01 | W/°C | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient | RθJA | 100 | °C/W | Surface mounted on 1 in² Cu board (steady state) | 2 | ||
| Junction-to-Ambient (t<10s) | RθJA | 99 | °C/W | t<10s | 2 |
CAD (KiCad official)
- Symbol:
IRLML0030TR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml0030tr-etched.step/irlml0030tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml0030tr.step/irlml0030tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
cea1705b11d5d440, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).