component

IRLML0030TR

Public Made by Adom

by adom

UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLML0030TR

UMW · MOSFETs · SOT-23

IRLML0030TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the MOSFET, with a gate-to-source voltage rating of ±20 V (VGS) per the maximum ratings table.
2 S passive SOURCE terminal of the MOSFET; the datasheet rates the continuous body-diode source current IS at 1.6 A and the pulsed source current ISM at 21 A.
3 D passive DRAIN terminal of the MOSFET, with a drain-source voltage VDS of 30 V and a continuous drain current ID of 5.3 A at TA=25°C with VGS @ 10V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1.3 1.7 2.3 V VDS=VGS, ID=25µA 3
Static Drain-to-Source On-Resistance RDS(ON) 33 40 mΩ VGS=4.5V, ID=4.2A 3
Static Drain-to-Source On-Resistance RDS(ON) 22 27 mΩ VGS=10V, ID=5.2A 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=24V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.02 V/°C ID=1mA, reference to 25°C 3
Forward Transconductance gfs 9.5 S VDS=10V, ID=5.2A 3
Input Capacitance Ciss 382 pF VGS=0V, VDS=15V, f=1MHz 3
Output Capacitance Coss 84 pF VGS=0V, VDS=15V, f=1MHz 3
Reverse Transfer Capacitance Crss 39 pF VGS=0V, VDS=15V, f=1MHz 3
Drain-Source Voltage VDS 30 V TA=25°C unless otherwise noted 1
Continuous Drain Current, VGS @ 10V ID 5.3 A TA=25°C 1
Continuous Drain Current, VGS @ 10V ID 4.3 A TA=70°C 1
Pulsed Drain Current IDM 21 A Pulse width ≤ 400µs; duty cycle ≤ 2% 1
Maximum Power Dissipation PD 1.3 W TA=25°C 1
Maximum Power Dissipation PD 0.8 W TA=70°C 1
Linear Derating Factor PD 0.01 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Junction-to-Ambient RθJA 100 °C/W Surface mounted on 1 in² Cu board (steady state) 2
Junction-to-Ambient (t<10s) RθJA 99 °C/W t<10s 2

CAD (KiCad official)

  • Symbol: IRLML0030TR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml0030tr-etched.step / irlml0030tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml0030tr.step / irlml0030tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 cea1705b11d5d440, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF