component
SL15N65CD
Public Made by Adomby adom
Slkor SLKORMICRO Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSL15N65CD
Slkor SLKORMICRO Elec · MOSFETs · TO-252
SL15N65CD from Slkor SLKORMICRO Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS = 10 V for the stated RDS(on), gate-source voltage limit ±30 V, threshold 2.5 to 4.5 V at VDS = VGS, ID = 250uA. |
| 2 | D | passive | Drain (middle lead, connected to the mounting tab); VDSS 650 V, continuous drain current 15 A at TC = 25°C. |
| 3 | S | passive | Source; body diode continuous forward current 12.5 A max, pulsed 37.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 250mA | 2 | ||
| Drain-Source Breakdown Voltage (TJ = 150℃) | BVDSS | 650 | V | VGS = 0 V, ID = 0.25uA, TJ = 150℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 600 V, VGS = 0 V | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 238 | 280 | mΩ | VGS = 10 V, ID = 7.5 A | 2 | |
| Drain-Source Diode Maximum Continuous Forward Current | IS | 12.5 | A | 2 | |||
| Drain-Source Diode Maximum Pulsed Forward Current | ISM | 37.5 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0 V, IS = 5.3A | 2 | ||
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current - Continuous | ID | 15 | A | TC = 25℃ | 1 | ||
| Drain Current - Continuous | ID | 8 | A | TC = 100℃ | 1 | ||
| Drain Current - Pulsed | IDM | 37.5 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 711 | mJ | Note 2 | 1 | ||
| Avalanche Current | IAR | 3 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 1.11 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 20 | V/ns | Note 3 | 1 | ||
| MOSFET dv/dt | dv/dt | 100 | V/ns | 1 | |||
| Power Dissipation | PD | 111 | W | TC = 25℃ | 1 | ||
| Derate above 25℃ | PD | 0.88 | W/℃ | Derate above 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | ℃ | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.13 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SL15N65CD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sl15n65cd-etched.step/sl15n65cd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sl15n65cd.step/sl15n65cd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (6 pp, sha256
03acf4b9b4e54090, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).