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SL15N65CD

Slkor SLKORMICRO Elec · MOSFETs · TO-252

SL15N65CD from Slkor SLKORMICRO Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS = 10 V for the stated RDS(on), gate-source voltage limit ±30 V, threshold 2.5 to 4.5 V at VDS = VGS, ID = 250uA.
2 D passive Drain (middle lead, connected to the mounting tab); VDSS 650 V, continuous drain current 15 A at TC = 25°C.
3 S passive Source; body diode continuous forward current 12.5 A max, pulsed 37.5 A.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250mA 2
Drain-Source Breakdown Voltage (TJ = 150℃) BVDSS 650 V VGS = 0 V, ID = 0.25uA, TJ = 150℃ 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 600 V, VGS = 0 V 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 2.5 4.5 V VDS = VGS, ID = 250uA 2
Static Drain-Source On-Resistance RDS(on) 238 280 mΩ VGS = 10 V, ID = 7.5 A 2
Drain-Source Diode Maximum Continuous Forward Current IS 12.5 A 2
Drain-Source Diode Maximum Pulsed Forward Current ISM 37.5 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0 V, IS = 5.3A 2
Drain-Source Voltage VDSS 650 V 1
Drain Current - Continuous ID 15 A TC = 25℃ 1
Drain Current - Continuous ID 8 A TC = 100℃ 1
Drain Current - Pulsed IDM 37.5 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 711 mJ Note 2 1
Avalanche Current IAR 3 A Note 1 1
Repetitive Avalanche Energy EAR 1.11 mJ 1
Peak Diode Recovery dv/dt dv/dt 20 V/ns Note 3 1
MOSFET dv/dt dv/dt 100 V/ns 1
Power Dissipation PD 111 W TC = 25℃ 1
Derate above 25℃ PD 0.88 W/℃ Derate above 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum Lead Temperature for Soldering TL 300 ℃ 1/8" from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 1.13 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: SL15N65CD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sl15n65cd-etched.step / sl15n65cd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl15n65cd.step / sl15n65cd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (6 pp, sha256 03acf4b9b4e54090, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF