component
IRF5803TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF5803TRPBF
Infineon Technologies · MOSFETs · TSOP-6
IRF5803TRPBF from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET; VDS is rated to -40 V and continuous ID is -3.4 A at TA = 25°C. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET; VDS is rated to -40 V and continuous ID is -3.4 A at TA = 25°C. |
| 3 | G | input | Gate terminal of the P-channel MOSFET; VGS is limited to ±20 V. |
| 4 | S | passive | Source terminal of the P-channel MOSFET; continuous source current IS is limited to -2.0 A. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; VDS is rated to -40 V and continuous ID is -3.4 A at TA = 25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; VDS is rated to -40 V and continuous ID is -3.4 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS = 0V, ID = -250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 112 | mΩ | VGS = -10V, ID = -3.4A | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 190 | mΩ | VGS = -4.5V, ID = -2.7A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250µA | 2 | |
| Forward Transconductance | gfs | 4 | S | VDS = -10V, ID = -3.4A | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -10 | µA | VDS = -32V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -25 | µA | VDS = -32V, VGS = 0V, TJ = 150°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Total Gate Charge | Qg | 25 | 37 | nC | ID = -3.4A | 2 | |
| Gate-to-Source Charge | Qgs | 4.5 | 6.8 | nC | VDS = -20V | 2 | |
| Gate-to-Drain (Miller) Charge | Qgd | 3.5 | 5.3 | nC | VGS = -10V | 2 | |
| Continuous Source Current (Body Diode) | IS | -2 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | -27 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ = 25°C, IS = -2.0A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 27 | 40 | ns | TJ = 25°C, IF = -2.0A | 2 | |
| Reverse Recovery Charge | Qrr | 34 | 50 | nC | di/dt = 100A/µs | 2 | |
| Drain-to-Source Voltage | VDS | -40 | V | 1 | |||
| Continuous Drain Current | ID | -3.4 | A | TA = 25°C, VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -2.7 | A | TA = 70°C, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -27 | A | 1 | |||
| Maximum Power Dissipation | PD | 2 | W | TA = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 16 | mW/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
IRF5803TRPBF - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
irf5803trpbf-etched.step/irf5803trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf5803trpbf.step/irf5803trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
04c905f5310197c1, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).