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IRF5803TRPBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 24d ago
viewers irf5803trpbf: viewers · Ray 24d ago
irf5803trpbf-etched.glb irf5803trpbf: factory component page (tier=lcsc) · Ray 24d ago
irf5803trpbf-etched.step irf5803trpbf: factory component page (tier=lcsc) · Ray 24d ago
irf5803trpbf-hero.glb irf5803trpbf: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
irf5803trpbf-hero.overlay.json Publish 0.1.0 · Ray 24d ago
irf5803trpbf.glb Publish 0.1.0 · Ray 24d ago
irf5803trpbf.kicad_mod Publish 0.1.0 · Ray 24d ago
irf5803trpbf.kicad_sym Publish 0.1.0 · Ray 24d ago
irf5803trpbf.lbr Publish 0.1.0 · Ray 24d ago
irf5803trpbf.step Publish 0.1.0 · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json irf5803trpbf: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 17d ago
README.md irf5803trpbf: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 17d ago

IRF5803TRPBF

Infineon Technologies · MOSFETs · TSOP-6

IRF5803TRPBF from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the P-channel MOSFET; VDS is rated to -40 V and continuous ID is -3.4 A at TA = 25°C.
2 D passive Drain terminal of the P-channel MOSFET; VDS is rated to -40 V and continuous ID is -3.4 A at TA = 25°C.
3 G input Gate terminal of the P-channel MOSFET; VGS is limited to ±20 V.
4 S passive Source terminal of the P-channel MOSFET; continuous source current IS is limited to -2.0 A.
5 D passive Drain terminal of the P-channel MOSFET; VDS is rated to -40 V and continuous ID is -3.4 A at TA = 25°C.
6 D passive Drain terminal of the P-channel MOSFET; VDS is rated to -40 V and continuous ID is -3.4 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS -40 V VGS = 0V, ID = -250µA 2
Static Drain-to-Source On-Resistance RDS(on) 112 mΩ VGS = -10V, ID = -3.4A 2
Static Drain-to-Source On-Resistance RDS(on) 190 mΩ VGS = -4.5V, ID = -2.7A 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250µA 2
Forward Transconductance gfs 4 S VDS = -10V, ID = -3.4A 2
Drain-to-Source Leakage Current IDSS -10 µA VDS = -32V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS -25 µA VDS = -32V, VGS = 0V, TJ = 150°C 2
Gate-to-Source Forward Leakage IGSS -100 nA VGS = -20V 2
Gate-to-Source Reverse Leakage IGSS 100 nA VGS = 20V 2
Total Gate Charge Qg 25 37 nC ID = -3.4A 2
Gate-to-Source Charge Qgs 4.5 6.8 nC VDS = -20V 2
Gate-to-Drain (Miller) Charge Qgd 3.5 5.3 nC VGS = -10V 2
Continuous Source Current (Body Diode) IS -2 A 2
Pulsed Source Current (Body Diode) ISM -27 A 2
Diode Forward Voltage VSD -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 2
Reverse Recovery Time trr 27 40 ns TJ = 25°C, IF = -2.0A 2
Reverse Recovery Charge Qrr 34 50 nC di/dt = 100A/µs 2
Drain-to-Source Voltage VDS -40 V 1
Continuous Drain Current ID -3.4 A TA = 25°C, VGS @ -10V 1
Continuous Drain Current ID -2.7 A TA = 70°C, VGS @ -10V 1
Pulsed Drain Current IDM -27 A 1
Maximum Power Dissipation PD 2 W TA = 25°C 1
Maximum Power Dissipation PD 1.3 W TA = 70°C 1
Linear Derating Factor 16 mW/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Storage Temperature Range TSTG -55 150 °C 1
Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W 1

CAD (KiCad official)

  • Symbol: IRF5803TRPBF
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: irf5803trpbf-etched.step / irf5803trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf5803trpbf.step / irf5803trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 04c905f5310197c1, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF