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STW45N65M5
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STMicroelectronics MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTW45N65M5
STMicroelectronics · MOSFETs · TO-247
STW45N65M5 from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±25 V. |
| 2 | D | passive | Drain terminal, also connected to the TAB; drain-source breakdown voltage is 650 V minimum and continuous drain current is 35 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; source-drain current is limited to 35 A continuous and 140 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 | 25 | V | 2 | ||
| Drain current (continuous) | ID | 35 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) | ID | 22 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM(1) | 140 | A | 2 | |||
| Total power dissipation | PTOT | 210 | W | TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt(2) | 15 | V/ns | ISD ≤ 35 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 400 V | 2 | ||
| MOSFET dv/dt ruggedness | dv/dt(3) | 50 | V/ns | VDD ≤ 520 V | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature range | TJ | 150 | °C | 2 | |||
| Thermal resistance, junction-to-case | RthJC | 0.6 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient | RthJA | 50 | °C/W | 2 | |||
| Avalanche current, repetitive or not-repetitive | IAR | 9 | A | pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 810 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS = 0 V, ID = 1 mA | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 650 V | 3 | ||
| Zero gate voltage drain current | IDSS | 100 | µA | VGS = 0 V, VDS = 650 V, TC = 125 °C(1) | 3 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±25 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 68 | 78 | mΩ | VGS = 10 V, ID = 17.5 A | 3 | |
| Source-drain current | ISD | 35 | A | 4 | |||
| Source-drain current (pulsed) | ISDM(1) | 140 | A | 4 | |||
| Forward on voltage | VSD(2) | 1.5 | V | ISD = 35 A, VGS = 0 V | 4 |
CAD (KiCad official)
- Symbol:
STW45N65M5 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
stw45n65m5-etched.step/stw45n65m5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stw45n65m5.step/stw45n65m5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
90d81de190da0390, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).