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STW45N65M5

Public Made by Adom

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STMicroelectronics MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STW45N65M5

STMicroelectronics · MOSFETs · TO-247

STW45N65M5 from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±25 V.
2 D passive Drain terminal, also connected to the TAB; drain-source breakdown voltage is 650 V minimum and continuous drain current is 35 A at TC = 25 °C.
3 S passive Source terminal; source-drain current is limited to 35 A continuous and 140 A pulsed.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -25 25 V 2
Drain current (continuous) ID 35 A TC = 25 °C 2
Drain current (continuous) ID 22 A TC = 100 °C 2
Drain current (pulsed) IDM(1) 140 A 2
Total power dissipation PTOT 210 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt(2) 15 V/ns ISD ≤ 35 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 400 V 2
MOSFET dv/dt ruggedness dv/dt(3) 50 V/ns VDD ≤ 520 V 2
Storage temperature range Tstg -55 150 °C 2
Operating junction temperature range TJ 150 °C 2
Thermal resistance, junction-to-case RthJC 0.6 °C/W 2
Thermal resistance, junction-to-ambient RthJA 50 °C/W 2
Avalanche current, repetitive or not-repetitive IAR 9 A pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 810 mJ starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 650 V VGS = 0 V, ID = 1 mA 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 650 V 3
Zero gate voltage drain current IDSS 100 µA VGS = 0 V, VDS = 650 V, TC = 125 °C(1) 3
Gate-body leakage current IGSS -100 100 nA VDS = 0 V, VGS = ±25 V 3
Gate threshold voltage VGS(th) 3 4 5 V VDS = VGS, ID = 250 µA 3
Static drain-source on-resistance RDS(on) 68 78 mΩ VGS = 10 V, ID = 17.5 A 3
Source-drain current ISD 35 A 4
Source-drain current (pulsed) ISDM(1) 140 A 4
Forward on voltage VSD(2) 1.5 V ISD = 35 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: STW45N65M5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: stw45n65m5-etched.step / stw45n65m5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stw45n65m5.step / stw45n65m5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 90d81de190da0390, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF