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HFFSH3065BF085

Public Made by Adom

by adom

HXY MOSFET SiC Diodes, TO-247-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshffsh3065bf085factory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HFFSH3065BF085

HXY MOSFET · SiC Diodes · TO-247-2L

HFFSH3065BF085 from HXY MOSFET, in a TO-247-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SiC Schottky diode, internally connected to the CASE (tab); repetitive peak reverse voltage VRRM is 650 V.
2 A passive Anode of the SiC Schottky diode; continuous forward current is 84 A at TC = 25°C, 43 A at 135°C and 30 A at 160°C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-2L
Category Silicon Carbide (SiC) Devices
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Peak Reverse Voltage VR 650 V 2
Repetitive Peak Reverse Voltage VRRM 650 V 2
Surge Peak Reverse Voltage VRSM 650 V 2
Continuous Forward Current IF 84 A TC = 25°C 2
Continuous Forward Current IF 43 A TC = 135°C 2
Continuous Forward Current IF 30 A TC = 160°C 2
Repetitive Peak Forward Surge Current IFRM 131 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Repetitive Peak Forward Surge Current IFRM 112 A TC = 110°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 210 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 170 A TC = 110°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 220 A²s TC = 25°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 144 A²s TC = 110°C, tp=10ms, Half Sine Pulse 2
Power dissipation Ptot 214 W TC = 25°C 2
Power dissipation Ptot 92 W TC = 110°C 2
Operating junction range Tj -55 175 °C 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance, junction to case RthJC 0.7 °C/W 2
Reverse Current IR 150 μA VR=650V 3
Forward Voltage VF 1.3 1.5 V IF=30A, Tj=25°C 3
Total Capacitance C 1986 pF Tj=25°C, f=1MHz, VR=0V 3
Total Capacitance C 202 pF Tj=25°C, f=1MHz, VR=200V 3
Total Capacitance C 166 pF Tj=25°C, f=1MHz, VR=400V 3

CAD (KiCad official)

  • Symbol: HFFSH3065BF085
  • Footprint: Package_TO_SOT_THT:TO-247-2_Vertical
  • 3D model: TO-247-2L (KiCad packages3D, STEP)
  • 3D model files: hffsh3065bf085-etched.step / hffsh3065bf085-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hffsh3065bf085.step / hffsh3065bf085.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 103233bd8bdc4009, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF