component
HFFSH3065BF085
Public Made by Adomby adom
HXY MOSFET SiC Diodes, TO-247-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 4h ago |
| hffsh3065bf085-etched.glb | 7d ago |
| hffsh3065bf085-etched.step | 7d ago |
| hffsh3065bf085-hero.glb | 7d ago |
| hffsh3065bf085-hero.overlay.json | 7d ago |
| hffsh3065bf085.glb | 7d ago |
| hffsh3065bf085.kicad_mod | 7d ago |
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| hffsh3065bf085.lbr | 4h ago |
| hffsh3065bf085.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
HFFSH3065BF085
HXY MOSFET · SiC Diodes · TO-247-2L
HFFSH3065BF085 from HXY MOSFET, in a TO-247-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SiC Schottky diode, internally connected to the CASE (tab); repetitive peak reverse voltage VRRM is 650 V. |
| 2 | A | passive | Anode of the SiC Schottky diode; continuous forward current is 84 A at TC = 25°C, 43 A at 135°C and 30 A at 160°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-2L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Peak Reverse Voltage | VR | 650 | V | 2 | |||
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | 2 | |||
| Surge Peak Reverse Voltage | VRSM | 650 | V | 2 | |||
| Continuous Forward Current | IF | 84 | A | TC = 25°C | 2 | ||
| Continuous Forward Current | IF | 43 | A | TC = 135°C | 2 | ||
| Continuous Forward Current | IF | 30 | A | TC = 160°C | 2 | ||
| Repetitive Peak Forward Surge Current | IFRM | 131 | A | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| Repetitive Peak Forward Surge Current | IFRM | 112 | A | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| Non-Repetitive Forward Surge Current | IFSM | 210 | A | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| Non-Repetitive Forward Surge Current | IFSM | 170 | A | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| i²dt value | ∫i²dt | 220 | A²s | TC = 25°C, tp=10ms, Half Sine Pulse | 2 | ||
| i²dt value | ∫i²dt | 144 | A²s | TC = 110°C, tp=10ms, Half Sine Pulse | 2 | ||
| Power dissipation | Ptot | 214 | W | TC = 25°C | 2 | ||
| Power dissipation | Ptot | 92 | W | TC = 110°C | 2 | ||
| Operating junction range | Tj | -55 | 175 | °C | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction to case | RthJC | 0.7 | °C/W | 2 | |||
| Reverse Current | IR | 150 | μA | VR=650V | 3 | ||
| Forward Voltage | VF | 1.3 | 1.5 | V | IF=30A, Tj=25°C | 3 | |
| Total Capacitance | C | 1986 | pF | Tj=25°C, f=1MHz, VR=0V | 3 | ||
| Total Capacitance | C | 202 | pF | Tj=25°C, f=1MHz, VR=200V | 3 | ||
| Total Capacitance | C | 166 | pF | Tj=25°C, f=1MHz, VR=400V | 3 |
CAD (KiCad official)
- Symbol:
HFFSH3065BF085 - Footprint:
Package_TO_SOT_THT:TO-247-2_Vertical - 3D model: TO-247-2L (KiCad packages3D, STEP)
- 3D model files:
hffsh3065bf085-etched.step/hffsh3065bf085-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hffsh3065bf085.step/hffsh3065bf085.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
103233bd8bdc4009, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).