component
S8205A
Public Made by Adomby adom
Guangdong Hottech MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS8205A
Guangdong Hottech · MOSFETs · SOT-23-6
S8205A from Guangdong Hottech, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1 per the SOT-23-6 top-view diagram and 3D view, label S1). |
| 2 | D1/D2 | passive | Common drain connection of MOSFET 1 and MOSFET 2 (labelled D1/D2). |
| 3 | S2 | passive | Source of MOSFET 2 (label S2). |
| 4 | G2 | passive | Gate of MOSFET 2, with VGS rated ±12 V. |
| 5 | D1/D2 | passive | Common drain connection of MOSFET 1 and MOSFET 2 (labelled D1/D2), VDS rated 20 V. |
| 6 | G1 | passive | Gate of MOSFET 1, with VGS rated ±12 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA | 1 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=16V, VGS=0V | 1 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 1 | |
| Gate-threshold voltage | VGS(th) | 0.5 | 0.8 | 1 | V | VDS=VGS, ID=250μA | 1 |
| Drain-source on-resistance | RDS(ON) | 22 | 25 | mΩ | VGS=4V, ID=5A | 1 | |
| Drain-source on-resistance | RDS(ON) | 38 | 40 | mΩ | VGS=2.5V, ID=4A | 1 | |
| Diode forward voltage | VSD | 0.42 | 1.28 | V | IS=1.7A, VGS=0V | 1 | |
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current | ID | 5 | A | TA = 25°C | 1 | ||
| Pulsed drain current | IDM | 25 | A | 1 | |||
| Power dissipation | PD | 1.25 | W | 1 | |||
| Junction and Storage temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Thermal resistance from Junction to ambient | RθJA | 100 | °C/W | 1 | |||
| Forward transconductance | gFS | 13 | S | VDS=5V, ID=5A | 1 | ||
| Input capacitance | Ciss | 800 | pF | 1 | |||
| Output capacitance | Coss | 155 | pF | VDS=8V, VGS=0V, f=1MHz | 1 | ||
| Reverse transfer capacitance | Crss | 125 | pF | 1 | |||
| Total gate charge | Qg | 11 | nC | 1 | |||
| Gate-source charge | Qgs | 2.2 | nC | VGS=4V,VDS=10V,ID=4A | 1 | ||
| Gate-drain charge | Qgd | 2.5 | nC | 1 | |||
| Turn-on delay time | td(on) | 18.3 | nS | VDD=10V, ID=1.0A,VGEN=4V, RGEN=10Ω,RL=10Ω | 1 | ||
| Turn-on rise time | tr | 4.8 | nS | 1 | |||
| Turn-off delay time | td(off) | 43.5 | nS | 1 | |||
| Turn-off fall time | tf | 20 | nS | 1 |
CAD (KiCad official)
- Symbol:
S8205A - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
s8205a-etched.step/s8205a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8205a.step/s8205a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (5 pp, sha256
80f33e8f88f76e85, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).