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S8205A

Public Made by Adom

by adom

Guangdong Hottech MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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page.json s8205a: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 17d ago
README.md s8205a: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 17d ago
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s8205a-hero.glb s8205a: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
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S8205A

Guangdong Hottech · MOSFETs · SOT-23-6

S8205A from Guangdong Hottech, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (pin 1 per the SOT-23-6 top-view diagram and 3D view, label S1).
2 D1/D2 passive Common drain connection of MOSFET 1 and MOSFET 2 (labelled D1/D2).
3 S2 passive Source of MOSFET 2 (label S2).
4 G2 passive Gate of MOSFET 2, with VGS rated ±12 V.
5 D1/D2 passive Common drain connection of MOSFET 1 and MOSFET 2 (labelled D1/D2), VDS rated 20 V.
6 G1 passive Gate of MOSFET 1, with VGS rated ±12 V.

Key specifications

Parameter Value
Manufacturer Guangdong Hottech
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source breakdown voltage V(BR)DSS 20 V VGS=0V, ID=250μA 1
Zero gate voltage drain current IDSS 1 μA VDS=16V, VGS=0V 1
Gate-body leakage current IGSS -100 100 nA VDS=0V, VGS=±12V 1
Gate-threshold voltage VGS(th) 0.5 0.8 1 V VDS=VGS, ID=250μA 1
Drain-source on-resistance RDS(ON) 22 25 mΩ VGS=4V, ID=5A 1
Drain-source on-resistance RDS(ON) 38 40 mΩ VGS=2.5V, ID=4A 1
Diode forward voltage VSD 0.42 1.28 V IS=1.7A, VGS=0V 1
Drain-source voltage VDS 20 V 1
Gate-source voltage VGS -12 12 V 1
Continuous drain current ID 5 A TA = 25°C 1
Pulsed drain current IDM 25 A 1
Power dissipation PD 1.25 W 1
Junction and Storage temperature Range TJ,TSTG -55 150 °C 1
Thermal resistance from Junction to ambient RθJA 100 °C/W 1
Forward transconductance gFS 13 S VDS=5V, ID=5A 1
Input capacitance Ciss 800 pF 1
Output capacitance Coss 155 pF VDS=8V, VGS=0V, f=1MHz 1
Reverse transfer capacitance Crss 125 pF 1
Total gate charge Qg 11 nC 1
Gate-source charge Qgs 2.2 nC VGS=4V,VDS=10V,ID=4A 1
Gate-drain charge Qgd 2.5 nC 1
Turn-on delay time td(on) 18.3 nS VDD=10V, ID=1.0A,VGEN=4V, RGEN=10Ω,RL=10Ω 1
Turn-on rise time tr 4.8 nS 1
Turn-off delay time td(off) 43.5 nS 1
Turn-off fall time tf 20 nS 1

CAD (KiCad official)

  • Symbol: S8205A
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: s8205a-etched.step / s8205a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s8205a.step / s8205a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Guangdong Hottech datasheet (5 pp, sha256 80f33e8f88f76e85, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF