component
AO4459-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4459-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4459-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together (VDS = -30V, ID = -5.1A device). |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together (VDS = -30V, ID = -5.1A device). |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins tied together (VDS = -30V, ID = -5.1A device). |
| 4 | G | input | Gate of the P-channel MOSFET, with VGS rated ±20V and a threshold of -1.0 to -2.5V at ID = -250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together (VDS = -30V, ID = -5.1A, pulsed IDM = -20.4A). |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together (VDS = -30V, ID = -5.1A, pulsed IDM = -20.4A). |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together (VDS = -30V, ID = -5.1A, pulsed IDM = -20.4A). |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins tied together (VDS = -30V, ID = -5.1A, pulsed IDM = -20.4A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | -5.1 | A | VGS @ 10V, ID@TA=25℃ | 1 | ||
| Pulsed Drain Current | IDM | -20.4 | A | 1 | |||
| Total Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 58 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS= VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 43 | 55 | mΩ | VGS =-10V, ID =-5A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 65 | 90 | mΩ | VGS =-4.5V, ID =-4A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -5.1 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -20.4 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS = 0V, IS = -5.1A | 2 |
CAD (KiCad official)
- Symbol:
AO4459-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4459-hxy-etched.step/ao4459-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4459-hxy.step/ao4459-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
0fd3278e1ecae637, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).