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AO4459-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4459-HXY

HXY MOSFET · MOSFETs · SOP-8

AO4459-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three source pins tied together (VDS = -30V, ID = -5.1A device).
2 S passive Source of the P-channel MOSFET, one of three source pins tied together (VDS = -30V, ID = -5.1A device).
3 S passive Source of the P-channel MOSFET, one of three source pins tied together (VDS = -30V, ID = -5.1A device).
4 G input Gate of the P-channel MOSFET, with VGS rated ±20V and a threshold of -1.0 to -2.5V at ID = -250μA.
5 D passive Drain of the P-channel MOSFET, one of four drain pins tied together (VDS = -30V, ID = -5.1A, pulsed IDM = -20.4A).
6 D passive Drain of the P-channel MOSFET, one of four drain pins tied together (VDS = -30V, ID = -5.1A, pulsed IDM = -20.4A).
7 D passive Drain of the P-channel MOSFET, one of four drain pins tied together (VDS = -30V, ID = -5.1A, pulsed IDM = -20.4A).
8 D passive Drain of the P-channel MOSFET, one of four drain pins tied together (VDS = -30V, ID = -5.1A, pulsed IDM = -20.4A).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current ID -5.1 A VGS @ 10V, ID@TA=25℃ 1
Pulsed Drain Current IDM -20.4 A 1
Total Power Dissipation PD 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 58 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS =0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS= VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 43 55 mΩ VGS =-10V, ID =-5A 2
Static Drain-Source on-Resistance RDS(on) 65 90 mΩ VGS =-4.5V, ID =-4A 2
Maximum Continuous Drain to Source Diode Forward Current IS -5.1 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -20.4 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -5.1A 2

CAD (KiCad official)

  • Symbol: AO4459-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4459-hxy-etched.step / ao4459-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4459-hxy.step / ao4459-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 0fd3278e1ecae637, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF