component
IPW90R1K0C3
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPW90R1K0C3
Infineon Technologies · MOSFETs · TO-247
IPW90R1K0C3 from Infineon Technologies, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin (pin 1) of the MOSFET; static gate-source voltage limited to ±20 V and AC (f>1 Hz) to ±30 V, with a gate threshold of 2.5 to 3.5 V at ID=0.37 mA. |
| 2 | D | passive | Drain pin (pin 2) of the MOSFET, rated for VDS of 900 V at TJ=25 °C with continuous drain current of 5.7 A at TC=25 °C. |
| 3 | S | passive | Source pin (pin 3) of the MOSFET, carrying the continuous diode forward current of 3.3 A at TC=25 °C through the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 5.7 | A | TC=25 °C | 1 | ||
| Continuous drain current | ID | 3.6 | A | TC=100 °C | 1 | ||
| Pulsed drain current | ID,pulse | 12 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 97 | mJ | ID=1.1 A, VDD=50 V | 1 | ||
| Avalanche energy, repetitive | EAR | 0.37 | mJ | ID=1.1 A, VDD=50 V | 1 | ||
| Avalanche current, repetitive | IAR | 1.1 | A | 1 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0...400 V | 1 | ||
| Gate source voltage, static | VGS | -30 | 30 | V | static | 1 | |
| Gate source voltage, AC | VGS | -20 | 20 | V | AC (f>1 Hz) | 1 | |
| Power dissipation | Ptot | 89 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Mounting torque | M | 60 | Ncm | M3 and M3.5 screws | 1 | ||
| Diode pulse current | IS,pulse | 13 | A | 2 | |||
| Reverse diode dv/dt | dv/dt | 4 | V/ns | ISD≤ID, di/dt≤200 A/µs, VDClink=400V | 2 | ||
| Thermal resistance, junction - case | RthJC | 1.4 | K/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | K/W | leaded | 2 | ||
| Soldering temperature, wavesoldering | Tsold | 260 | °C | 1.6 mm (0.063 in.) from case for 10 s; wave soldering only at leads | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 900 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS=VGS, ID=0.37 mA | 2 |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=900 V, VGS=0 V, Tj=25 °C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.78 | 1 | Ω | VGS=10 V, ID=3.3 A, Tj=25 °C | 2 | |
| Reverse diode forward voltage | VSD | 0.8 | 1.2 | V | VGS=0 V, IF=3.3 A, Tj=25 °C | 3 | |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=900 V, VGS=0 V, Tj=150 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 2.1 | Ω | VGS=10 V, ID=3.3 A, Tj=150 °C | 2 | ||
| Gate resistance | RG | 1.3 | Ω | f=1 MHz, open drain | 2 | ||
| Input capacitance | Ciss | 850 | pF | VGS=0 V, VDS=100 V, f=1 MHz | 3 | ||
| Output capacitance | Coss | 42 | pF | VGS=0 V, VDS=100 V, f=1 MHz | 3 | ||
| Effective output capacitance, energy related | Co(er) | 28 | pF | VGS=0 V, VDS=0 V to 500 V | 3 | ||
| Effective output capacitance, time related | Co(tr) | 100 | pF | VGS=0 V, VDS=0 V to 500 V | 3 | ||
| Turn-on delay time | td(on) | 70 | ns | VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω | 3 | ||
| Rise time | tr | 20 | ns | VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω | 3 | ||
| Turn-off delay time | td(off) | 400 | ns | VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω | 3 | ||
| Fall time | tf | 35 | ns | VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω | 3 | ||
| Gate to source charge | Qgs | 4 | nC | VDD=400 V, ID=3.3 A, VGS=0 to 10 V | 3 | ||
| Gate to drain charge | Qgd | 15 | nC | VDD=400 V, ID=3.3 A, VGS=0 to 10 V | 3 | ||
| Gate charge total | Qg | 34 | nC | VDD=400 V, ID=3.3 A, VGS=0 to 10 V | 3 | ||
| Gate plateau voltage | Vplateau | 4.6 | V | 3 | |||
| Reverse recovery time | trr | 340 | ns | VR=400 V, IF=IS, diF/dt=100 A/µs | 3 | ||
| Reverse recovery charge | Qrr | 4.1 | µC | VR=400 V, IF=IS, diF/dt=100 A/µs | 3 | ||
| Peak reverse recovery current | Irrm | 21 | A | VR=400 V, IF=IS, diF/dt=100 A/µs | 3 |
CAD (KiCad official)
- Symbol:
IPW90R1K0C3 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ipw90r1k0c3-etched.step/ipw90r1k0c3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipw90r1k0c3.step/ipw90r1k0c3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
9605f98e3ff0d8b6, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).